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FMSK2080C-D2G PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 FMSK2080C-D2G
部品説明 (FMSK2020C-D2G - FMSK20200C-D2G) Schottky Barrier Rectifier
メーカ American First Semiconductor
ロゴ American First Semiconductor ロゴ 

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FMSK2080C-D2G Datasheet, FMSK2080C-D2G PDF,ピン配置, 機能
FMSK2020C-D2G THRU FMSK20200C-D2G
Schottky Barrier Rectifier(Single Chip)
Reverse Voltage: 20 to 200 Volts
Forward Current: 20.0 Ampere
Features
Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
Metal silicon junction, majority carrier conduction
Guard ring for overvoltage protection
Low power loss, high efficiency
High current capability, Low forward voltage drop
Single rectifier construction
High surge capability
For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
High temperature soldering guaranteed:
260 C/10 seconds, 0.25"(6.35mm)from case
Component in accordance to RoHS 2002/95/EC and
WEEE 2002/96/EC
Package outline
TO-263
0.420(10.67)
0.380(9.65)
0.245(6.22)
MIN
0.360(9.14)
0.320(8.13)
1K 2
0.190(4.83)
0.160(4.06)
0.055(1.40)
0.045(1.14)
0.066(1.68)
0.036(0.92)
0.053(1.34)
0.047(1.20)
0.095(2.41)
0.083(2.10)
0.131(3.32)
0.090(2.29)
0.037(0.94)
0.027(0.69)
0.134(3.40)
0.105(2.67)
0.018(0.46)
0.014(0.35)
Mechanical data
Case: JEDEC TO-263 molded plastic body
Terminals: Solderable per MIL-STD-202, Method 208
Polarity: As marked
Mounting Position: Any
Weight: 0.08 ounce, 2.24 gram
Dimensions in inches and (millimeters)
Maximum Ratings And Electrical Characteristics
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, resistive or inductive load.
For capacitive load, derate by 20%.
Type Number
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
See Fig.1
Peak forward surge current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
Maximum instantaneous forward voltage
at 20.0 A
Maximum instantaneous reverse
current at rated DC blocking
voltage(Note 1)
T C =25 C
TC =125 C
Typical thermal resistance (Note 2)
Operating junction temperature range
Storage temperature range
Symbols
VRRM
VRMS
VDC
I(AV)
IFSM
VF
IR
R JC
TJ
TSTG
FMSK FMSK FMSK FMSK FMSK FMSK FMSK FMSK FMSK
2020 2040 2045 2050 2060 2080 20100 20150 20200
C-D2G C-D2G C-D2G C-D2G C-D2G C-D2G C-D2G C-D2G C-D2G
20 40 45
50
60
80 100 150
200
14 28 31ㄅ.5 35 42 56 70 105 140
20 40 45
50
60
80 100 150
200
20.0
200.0
0.60
30
0.75
0.2
3.0
-65 to+150
-65 to+150
0.85
50
0.90 0.95
Notes: 1.Pulse test: 300 s pulse width,1% duty cycle
2.Thermal resistance from junction to case
Units
Volts
Volts
Volts
Amps
Amps
Volts
mA
C/W
C
C
@ 2010 Copyright By American First Semiconductor
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