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PDF FMSK1050C-DG Data sheet ( Hoja de datos )
| Número de pieza | FMSK1050C-DG | |
| Descripción | (FMSK1020C-DG - FMSK10200C-DG) Schottky Barrier Rectifier | |
| Fabricantes | American First Semiconductor | |
| Logotipo |  |
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Schottky Barrier Rectifier
FMSK1020C-DG THRU FMSK10200C-DG
Reverse Voltage: 20 to 200 Volts
Forward Current: 1.0 Ampere
Features
• Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
• Guard ring for overvoltage protection
• Low power loss, high efficiency
• High current capability, Low forward voltage drop
• Single rectifier construction
• High surge capability
• For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
• High temperature soldering guaranteed:
260 C/10 seconds at terminals, 0.25"(6.35mm)from case
• Component in accordance to RoHS 2002/95/EC and
WEEE 2002/96/EC
Package outline
TO-252
0.265(6.73)
0.244(6.20)
0.215(5.46)
0.205(5.21)
0.245(6.22)
0.220(5.60)
1K2
0.104(2.65)
0.085(2.15)
0.023(0.58)
0.017(0.42)
0.050(1.27)
0.035(0.88)
0.094(2.40)
0.084(2.14)
0.039(1.00)
MIN.
0.026(0.66)
0.023(0.58)
0.017(0.42)
Mechanical data
• Case: JEDEC TO-252 molded plastic body
• Terminals: Solderable per MIL-STD-202, Method 208
• Polarity: As marked
• Mounting Position: Any
• Weight: 0.014 ounce, 0.4 grams
Dimensions in inches and (millimeters)
Maximum Ratings And Electrical Characteristics
• Ratings at 25 C ambient temperature unless otherwise specified.
• Single phase, half wave, resistive or inductive load.
• For capacitive load, derate by 20%.
Type Number
Symbols
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
(see Fig.1)
Peak forward surge current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
Maximum instantaneous forward voltage
at 10.0 A(Note 1 )
Maximum instantaneous reverse
current at rated DC blocking
voltage(Note 1)
T A =25 C
TA =125 C
VRRM
VRMS
VDC
I(AV)
IFSM
VF
IR
Typical thermal resistance (Note 2)
R JC
Operating junction temperature range
Storage temperature range
TJ
TSTG
Notes: 1.Pulse test: 300 s pulse width,1% duty cycle
2.Thermal resistance from junction to case
FMSK
1020
C-DG
20
14
20
FMSK
1040
C-DG
40
28
40
FMSK
1045
C-DG
45
31ㄅ.5
45
FMSK
1050
C-DG
50
35
50
FMSK FMSK
1060 1080
C-DG C-DG
60 80
42 56
60 80
FMSK
10100
C-DG
100
70
100
FMSK
10150
C-DG
150
105
150
FMSK
10200
C-DG
200
140
200
10.0
0.60
15
150.0
0.75
0.2
2.5
-65 to+150
-65 to+150
0.85
50
0.90 0.95
Units
Volts
Volts
Volts
Amps
Amps
Volts
mA
C/W
C
C
@ 2010 Copyright By American First Semiconductor
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| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet FMSK1050C-DG.PDF ] | |
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