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What is MBR830NG?

This electronic component, produced by the manufacturer "American First Semiconductor", performs the same function as "(MBR820NG - MBR8100NG) 8.0A Leaded Type Schottky Barrier Rectifiers".


MBR830NG Datasheet PDF - American First Semiconductor

Part Number MBR830NG
Description (MBR820NG - MBR8100NG) 8.0A Leaded Type Schottky Barrier Rectifiers
Manufacturers American First Semiconductor 
Logo American First Semiconductor Logo 


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Schottky Barrier Rectifier
MBR820NG THRU MBR8100NG
8.0A Leaded Type Schottky Barrier
Rectifiers - 20V-100V
Features
Axial lead type devices for through hole design.
Low power loss, high efficiency.
High current capability, low forward voltage drop.
High surge capability.
Guardring for overvoltage protection.
Ultra high-speed switching.
Silicon epitaxial planar chip, metal silicon junction.
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
Suffix "-H" indicates Halogen free parts, ex. MBR820NG-H.
Package outline
DO-201AD
.220(5.6)
.197(5.0)
DIA.
1.0(25.4)
MIN.
.375(9.5)
.285(7.2)
Mechanical data
Epoxy:UL94-V0 rated flame retardant
Case : Molded plastic, DO-201AD
Terminals : Solder plated, solderable per MIL-STD-202,
Method 208 guranteed
Polarity :Color band denotes cathode end
Mounting Position : Any
Weight :Approximated 1.10 gram
.052(1.3)
.048(1.2)
DIA.
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
Maximum ratings (AT TA=25oC unless otherwise noted)
PARAMETER
CONDITIONS
Forward rectified current
See Fig.2
Forward surge current
Reverse current
Thermal resistance
Diode junction capacitance
Storage temperature
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
VR = VRRM TJ = 25OC
VR = VRRM TJ = 100OC
Junction to ambient
f=1MHz and applied 4V DC reverse voltage
Symbol MIN.
IO
IFSM
TYP.
MAX. UNIT
8.0 A
150 A
IR
RθJA
CJ
TSTG
0.5
mA
50
30 OC/W
550 pF
-65 +175 OC
SYMBOLS
MBR820NG
MBR830NG
MBR840NG
MBR850NG
MBR860NG
MBR880NG
MBR8100NG
V
RR
*
M
1
(V)
20
30
40
50
60
80
100
V
R
*
MS
2
(V)
14
21
28
35
42
56
70
V
*
R
3
(V)
20
30
40
50
60
80
100
V
*
F
4
(V)
0.55
0.70
0.85
Operating
temperature
TJ, (OC)
-55 to +125
-55 to +150
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage@IF=8.0A
@ 2010 Copyright By American First Semiconductor
Page 1/2


Part Details

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Featured Datasheets

Part NumberDescriptionMFRS
MBR830NGThe function is (MBR820NG - MBR8100NG) 8.0A Leaded Type Schottky Barrier Rectifiers. American First SemiconductorAmerican First Semiconductor

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