DataSheet.jp

FMSK620Y-DG PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 FMSK620Y-DG
部品説明 (FMSK620Y-DG - FMSK6100Y-DG) 6.0A Surface Mount Schottky Barrier Rectifiers
メーカ American First Semiconductor
ロゴ American First Semiconductor ロゴ 

Total 2 pages
		

No Preview Available !

FMSK620Y-DG Datasheet, FMSK620Y-DG PDF,ピン配置, 機能
Chip Schottky Barrier Rectifier
FMSK620Y-DG THRU FMSK6100Y-DG
6.0A Surface Mount Schottky Barrier
Rectifiers - 20V-100V
Features
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
optimize board space.
Low power loss, high efficiency.
High current capability, low forward voltage drop.
High surge capability.
Guardring for overvoltage protection.
Ultra high-speed switching.
Silicon epitaxial planar chip, metal silicon junction.
Lead-free parts meet environmental standards of
MIL-STD-19500/228
Suffix "-H" indicates Halogen free parts, ex. FMSK620Y-DG-H.
Mechanical data
Epoxy: UL94-V0 rated frame retardant
Case: Molded plastic, TO-252 / DPAK
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity: lndicated by cathode band
Mounting Position: Any
Weight: Approximated 0.34 gram
Package outline
DPAK
0.048(1.20)
0.031(0.80)
0.264(6.70)
0.248(6.30)
0.217(5.50)
0.201(5.10)
0.098(2.50)
0.083(2.10)
0.024(0.60)
0.016(0.40)
0.244(6.20)
0.228(5.80)
0.114(2.90)
0.098(2.50)
0.185(4.70)
0.169(4.30)
0.039(1.00)
0.031(0.80)
0.024(0.60)
0.016(0.40)
0.032(0.80)
0.016(0.40)
Dimensions in inches and (millimeters)
Maximum ratings (AT TA=25oC unless otherwise noted)
PARAMETER
CONDITIONS
Forward rectified current
See Fig.1
Forward surge current
Reverse current
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
VR = VRRM TJ = 25OC
VR = VRRM TJ = 100OC
Thermal resistance
Junction to case
Storage temperature
Symbol MIN.
IO
IFSM
TYP.
MAX. UNIT
6.0 A
75 A
0.5
IR
mA
20
RθJC
5.0 OC/W
TSTG
-65
+175 OC
SYMBOLS
FMSK620Y-DG
FMSK640Y-DG
FMSK645Y-DG
FMSK650Y-DG
FMSK660Y-DG
FMSK680Y-DG
FMSK6100Y-DG
V
*
RRM
1
(V)
20
40
45
50
60
80
100
V
R
*
MS
2
(V)
14
28
31.5
35
42
56
70
V
*
R
3
(V)
20
40
45
50
60
80
100
V
*
F
4
(V)
0.55
0.75
0.85
Operating
temperature
TJ, (OC)
-55 to +125
-55 to +150
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage@IF = 6.0A
@ 2010 Copyright By American First Semiconductor
Page 1/2

1 Page





ページ 合計 : 2 ページ
PDF
ダウンロード
[ FMSK620Y-DG.PDF ]

共有リンク

Link :

おすすめデータシート

部品番号部品説明メーカ
FMSK620Y-DG

There is a function of (FMSK620Y-DG - FMSK6100Y-DG) 6.0A Surface Mount Schottky Barrier Rectifiers.

American First Semiconductor
American First Semiconductor

多くを見つけるデータシート

部品番号部品説明メーカ
82S129

The 82S126 and 82S129 are field programmable, which means that custom patterns are immediately available by following the Signetics Generic fusing procedure. 1K-bit TTL Bipolar PROM, Address access time : 50ns max.

NXP
NXP
D1695

This part is a darlington connection NPN silicon epitaxial transistor. The 2SD1695 is a Darlington connection transistor and incorporates a dumper diode between the collector and emitter and a constant voltage diode and protection elements between the collector and base. This transistor is ideal for drives in solenoid and actuators.

NEC
NEC

www.DataSheet.jp    |   2018   |  メール    |   最新    |   Sitemap