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MBR3100NG PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 MBR3100NG
部品説明 (MBR320NG - MBR3200NG) 3.0A Leaded Type Schottky Barrier Rectifiers
メーカ American First Semiconductor
ロゴ American First Semiconductor ロゴ 

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MBR3100NG Datasheet, MBR3100NG PDF,ピン配置, 機能
Schottky Barrier Rectifier
MBR320NG THRU MBR3100NG
3.0A Leaded Type Schottky Barrier
Rectifiers - 20V-200V
Features
Axial lead type devices for through hole design.
Low power loss, high efficiency.
High current capability, low forward voltage drop.
High surge capability.
Guardring for overvoltage protection.
Ultra high-speed switching.
Silicon epitaxial planar chip, metal silicon junction.
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
Suffix "-H" indicates Halogen free parts, ex. MBR320NG-H.
Package outline
DO-201AD
.220(5.6)
.197(5.0)
DIA.
1.0(25.4)
MIN.
.375(9.5)
.285(7.2)
Mechanical data
Epoxy:UL94-V0 rated flame retardant
Case : Molded plastic, DO-201AD
Terminals : Solder plated, solderable per MIL-STD-202,
Method 208 guranteed
Polarity :Color band denotes cathode end
Mounting Position : Any
Weight :Approximated 1.10 gram
.052(1.3)
.048(1.2)
DIA.
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
Maximum ratings (AT TA=25oC unless otherwise noted)
PARAMETER
CONDITIONS
Forward rectified current
See Fig.2
Forward surge current
Reverse current
Thermal resistance
Diode junction capacitance
Storage temperature
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
VR = VRRM TJ = 25OC
VR = VRRM TJ = 100OC
Junction to ambient
f=1MHz and applied 4V DC reverse voltage
Symbol MIN. TYP. MAX. UNIT
IO 3.0 A
IFSM 80 A
IR
RθJA
CJ
TSTG
0.5
mA
30
20 OC/W
250 pF
-65 +175 OC
SYMBOLS
MBR320NG
MBR330NG
MBR340NG
MBR350NG
MBR360NG
MBR380NG
MBR3100NG
MBR3150NG
MBR3200NG
V
RR
*
M
1
(V)
20
30
40
50
60
80
100
150
200
V
*
RMS
2
(V)
14
21
28
35
42
56
70
105
140
V
*
R
3
(V)
20
30
40
50
60
80
100
150
200
V
*
F
4
(V)
Operating
temperature
TJ, (OC)
0.55 -55 to +125
0.70
0.85
0.90
0.95
-55 to +150
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage@IF=3.0A
@ 2010 Copyright By American First Semiconductor
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