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MBR330NGのメーカーはAmerican First Semiconductorです、この部品の機能は「(MBR320NG - MBR3200NG) 3.0A Leaded Type Schottky Barrier Rectifiers」です。 |
部品番号 | MBR330NG |
| |
部品説明 | (MBR320NG - MBR3200NG) 3.0A Leaded Type Schottky Barrier Rectifiers | ||
メーカ | American First Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとMBR330NGダウンロード(pdfファイル)リンクがあります。 Total 2 pages
Schottky Barrier Rectifier
MBR320NG THRU MBR3100NG
3.0A Leaded Type Schottky Barrier
Rectifiers - 20V-200V
Features
• Axial lead type devices for through hole design.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• Suffix "-H" indicates Halogen free parts, ex. MBR320NG-H.
Package outline
DO-201AD
.220(5.6)
.197(5.0)
DIA.
1.0(25.4)
MIN.
.375(9.5)
.285(7.2)
Mechanical data
• Epoxy:UL94-V0 rated flame retardant
• Case : Molded plastic, DO-201AD
• Terminals : Solder plated, solderable per MIL-STD-202,
Method 208 guranteed
• Polarity :Color band denotes cathode end
• Mounting Position : Any
• Weight :Approximated 1.10 gram
.052(1.3)
.048(1.2)
DIA.
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
Maximum ratings (AT TA=25oC unless otherwise noted)
PARAMETER
CONDITIONS
Forward rectified current
See Fig.2
Forward surge current
Reverse current
Thermal resistance
Diode junction capacitance
Storage temperature
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
VR = VRRM TJ = 25OC
VR = VRRM TJ = 100OC
Junction to ambient
f=1MHz and applied 4V DC reverse voltage
Symbol MIN. TYP. MAX. UNIT
IO 3.0 A
IFSM 80 A
IR
RθJA
CJ
TSTG
0.5
mA
30
20 OC/W
250 pF
-65 +175 OC
SYMBOLS
MBR320NG
MBR330NG
MBR340NG
MBR350NG
MBR360NG
MBR380NG
MBR3100NG
MBR3150NG
MBR3200NG
V
RR
*
M
1
(V)
20
30
40
50
60
80
100
150
200
V
*
RMS
2
(V)
14
21
28
35
42
56
70
105
140
V
*
R
3
(V)
20
30
40
50
60
80
100
150
200
V
*
F
4
(V)
Operating
temperature
TJ, (OC)
0.55 -55 to +125
0.70
0.85
0.90
0.95
-55 to +150
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage@IF=3.0A
@ 2010 Copyright By American First Semiconductor
Page 1/2
1 Page | |||
ページ | 合計 : 2 ページ | ||
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PDF ダウンロード | [ MBR330NG データシート.PDF ] |
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部品番号 | 部品説明 | メーカ |
MBR330NG | (MBR320NG - MBR3200NG) 3.0A Leaded Type Schottky Barrier Rectifiers | American First Semiconductor |