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PDF MBR1200TG Data sheet ( Hoja de datos )
| Número de pieza | MBR1200TG | |
| Descripción | (MBR120TG - MBR1200TG) Schottky Barrier Rectifier | |
| Fabricantes | American First Semiconductor | |
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Schottky Barrier Rectifier
MBR120TG THRU MBR1200TG
Reverse Voltage: 20 to 200 Volts
Forward Current: 1.0 Ampere
Package outline
Features
• Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
• Metal silicon junction, majority carrier conduction
• Low power loss, high efficiency
• High current capability, Low forward voltage drop
• High surge capability
• For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
• High temperature soldering guaranteed:
260 C/10 seconds at terminals
• Component in accordance to RoHS 2002/95/EC and
WEEE 2002/96/EC
Mechanical data
• Case: R-1 molded plastic body
• Terminals: Plated axial leads, solderable per MIL-STD-750,
Method 2026
• Polarity: Color band denotes cathode end
• Mounting Position: Any
• Weight: 0.007 ounce, 0.20 gram
R-1
0.102(2.6)
0.091(2.3)
DIA.
0.787(20.0)
MIN.
0.126(3.2)
0.106(2.7)
0.025(0.65)
0.021(0.55)
DIA.
0.787(20.0)
MIN.
Dimensions in inches and (millimeters)
Maximum Ratings And Electrical Characteristics
• Ratings at 25 C ambient temperature unless otherwise specified.
• Single phase, half wave, resistive or inductive load.
• For capacitive load derate by 20%.
Type Number
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375"(9.5mm) lead length(see Fig. 1 )
Peak forward surge current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
Maximum instantaneous forward voltage
at 1.0 A(Note 1 )
Maximum instantaneous reverse
current at rated DC blocking
voltage(Note 1)
TA =25 C
TA =100 C
Typical junction capacitance(Note 3)
Typical thermal resistance(Note 2)
Symbols
VRRM
VRMS
VDC
I(AV)
IFSM
VF
IR
CJ
R JA
MBR
120
TG
20
14
20
MBR
130
TG
30
21
30
MBR
140
TG
40
28
40
MBR
150
TG
50
35
50
MBR
160
TG
60
42
60
MBR
180
TG
80
57
80
1.0
MBR
1100
TG
100
71
100
40.0
0.55 0.70 0.85
0.2
10
110
50.0
Operating junction temperature range
Storage temperature range
TJ
TSTG
-65 to+150
-65 to+150
Notes: 1.Pulse test: 300 s pulse width,1% duty cycle
2.Thermal resistance (from junction to ambient)Vertical P.C.B. mounted , 0.5"(12.7mm)lead length
3.Measured at 1.0MHz and reverse voltage of 4.0 volts
MBR
1150
TG
150
105
150
0.90
MBR
1200
TG
200
140
200
0.95
Units
Volts
Volts
Volts
Amp
Amps
Volts
mA
PF
C/W
C
C
@ 2010 Copyright By American First Semiconductor
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| PDF Descargar | [ Datasheet MBR1200TG.PDF ] | |
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