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MBRS540G PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 MBRS540G
部品説明 (MBRS520G - MBRS5200G) 5.0A Surface Mount Schottky Barrier Rectifiers
メーカ American First Semiconductor
ロゴ American First Semiconductor ロゴ 

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MBRS540G Datasheet, MBRS540G PDF,ピン配置, 機能
Chip Schottky Barrier Rectifier
MBRS520G THRU MBRS5200G
5.0A Surface Mount Schottky Barrier
Rectifiers -20V-200V
Features
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
optimize board space.
Low power loss, high efficiency.
High current capability, low forward voltage drop.
High surge capability.
Guardring for overvoltage protection.
Ultra high-speed switching.
Silicon epitaxial planar chip, metal silicon junction.
Lead-free parts meet environmental standards of
MIL-STD-19500/228
Suffix "-H" indicates Halogen free parts, ex. MBRS520G-H.
Mechanical data
Epoxy: UL94-V0 rated frame retardant
Case: Molded plastic, DO-214AB / SMC
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity: lndicated by cathode band
Mounting Position: Any
Weight: Approximated 0.19 gram
Package outline
SMC
0.272(6.9)
0.248(6.3)
0.012(0.3) Typ.
0.189(4.8)
0.165(4.2)
0.048(1.2) Typ.
0.098(2.5)
0.075(1.9)
0.048 (1.2) Typ.
Dimensions in inches and (millimeters)
Maximum ratings (AT T A=25oC unless otherwise noted)
PARAMETER
CONDITIONS
Forward rectified current
See Fig.1
Forward surge current
Reverse current
Thermal resistance
Diode junction capacitance
Storage temperature
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
FM520 ~
FM540
VR = VRRM TJ = 25OC
VR = VRRM TJ = 100OC
FM550 ~
FM5200
VR = VRRM TJ = 25OC
VR = VRRM TJ = 100OC
Junction to ambient
Junction to case
f=1MHz and applied 4V DC reverse voltage
Symbol
IO
IFSM
MIN.
TYP.
MAX. UNIT
5.0 A
150 A
IR
RθJA
RθJC
CJ
TSTG
0.5
20 mA
0.2
10
36 OC/W
16 OC/W
380 pF
-65 +175 OC
SYMBOLS
MBRS520G
MBRS530G
MBRS540G
MBRS550G
MBRS560G
MBRS580G
MBRS5100G
MBRS5150G
MBRS5200G
V
*
RRM
1
(V)
20
30
40
50
60
80
100
150
200
V
R
*
MS
2
(V)
14
21
28
35
42
56
70
105
140
V
*
R
3
(V)
20
30
40
50
60
80
100
150
200
V
*
F
4
(V)
0.55
0.75
0.85
0.90
0.92
Operating
temperature
TJ, (OC)
-55 to +125
-55 to +150
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage@IF=5.0A
@ 2010 Copyright By American First Semiconductor
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