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PDF MBRS530G Data sheet ( Hoja de datos )
| Número de pieza | MBRS530G | |
| Descripción | (MBRS520G - MBRS5200G) 5.0A Surface Mount Schottky Barrier Rectifiers | |
| Fabricantes | American First Semiconductor | |
| Logotipo |  |
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Chip Schottky Barrier Rectifier
MBRS520G THRU MBRS5200G
5.0A Surface Mount Schottky Barrier
Rectifiers -20V-200V
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500/228
• Suffix "-H" indicates Halogen free parts, ex. MBRS520G-H.
Mechanical data
• Epoxy: UL94-V0 rated frame retardant
• Case: Molded plastic, DO-214AB / SMC
• Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
• Polarity: lndicated by cathode band
• Mounting Position: Any
• Weight: Approximated 0.19 gram
Package outline
SMC
0.272(6.9)
0.248(6.3)
0.012(0.3) Typ.
0.189(4.8)
0.165(4.2)
0.048(1.2) Typ.
0.098(2.5)
0.075(1.9)
0.048 (1.2) Typ.
Dimensions in inches and (millimeters)
Maximum ratings (AT T A=25oC unless otherwise noted)
PARAMETER
CONDITIONS
Forward rectified current
See Fig.1
Forward surge current
Reverse current
Thermal resistance
Diode junction capacitance
Storage temperature
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
FM520 ~
FM540
VR = VRRM TJ = 25OC
VR = VRRM TJ = 100OC
FM550 ~
FM5200
VR = VRRM TJ = 25OC
VR = VRRM TJ = 100OC
Junction to ambient
Junction to case
f=1MHz and applied 4V DC reverse voltage
Symbol
IO
IFSM
MIN.
TYP.
MAX. UNIT
5.0 A
150 A
IR
RθJA
RθJC
CJ
TSTG
0.5
20 mA
0.2
10
36 OC/W
16 OC/W
380 pF
-65 +175 OC
SYMBOLS
MBRS520G
MBRS530G
MBRS540G
MBRS550G
MBRS560G
MBRS580G
MBRS5100G
MBRS5150G
MBRS5200G
V
*
RRM
1
(V)
20
30
40
50
60
80
100
150
200
V
R
*
MS
2
(V)
14
21
28
35
42
56
70
105
140
V
*
R
3
(V)
20
30
40
50
60
80
100
150
200
V
*
F
4
(V)
0.55
0.75
0.85
0.90
0.92
Operating
temperature
TJ, (OC)
-55 to +125
-55 to +150
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage@IF=5.0A
@ 2010 Copyright By American First Semiconductor
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