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MBRS350G の電気的特性と機能

MBRS350GのメーカーはAmerican First Semiconductorです、この部品の機能は「(MBRS320G - MBRS3200G) 3.0A Surface Mount Schottky Barrier Rectifiers」です。


製品の詳細 ( Datasheet PDF )

部品番号 MBRS350G
部品説明 (MBRS320G - MBRS3200G) 3.0A Surface Mount Schottky Barrier Rectifiers
メーカ American First Semiconductor
ロゴ American First Semiconductor ロゴ 




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MBRS350G Datasheet, MBRS350G PDF,ピン配置, 機能
Chip Schottky Barrier Rectifier
MBRS320G THRU MBRS3200G
3.0A Surface Mount Schottky Barrier
Rectifiers -20V-200V
Features
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
optimize board space.
Low power loss, high efficiency.
High current capability, low forward voltage drop.
High surge capability.
Guardring for overvoltage protection.
Ultra high-speed switching.
Silicon epitaxial planar chip, metal silicon junction.
Lead-free parts meet environmental standards of
MIL-STD-19500/228
Suffix "-H" indicates Halogen free parts, ex. MBRS320G-H.
Mechanical data
Epoxy: UL94-V0 rated frame retardant
Case: Molded plastic, DO-214AB / SMC
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity: lndicated by cathode band
Mounting Position: Any
Weight: Approximated 0.19 gram
Package outline
SMC
0.272(6.9)
0.248(6.3)
0.012(0.3) Typ.
0.189(4.8)
0.165(4.2)
0.048(1.2) Typ.
0.098(2.5)
0.075(1.9)
0.048 (1.2) Typ.
Dimensions in inches and (millimeters)
Maximum ratings (AT TA=25oC unless otherwise noted)
PARAMETER
Forward rectified current
See Fig.1
CONDITIONS
Forward surge current
Reverse current
Thermal resistance
Diode junction capacitance
Storage temperature
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
VR = VRRM TJ = 25OC
VR = VRRM TJ = 100OC
Junction to ambient
f=1MHz and applied 4V DC reverse voltage
Symbol
IO
IFSM
MIN.
TYP.
MAX. UNIT
3.0 A
80 A
IR
RθJA
CJ
TSTG
0.5
mA
20
55 OC/W
250 pF
-65 +175 OC
SYMBOLS
MBRS320G
MBRS330G
MBRS340G
MBRS350G
MBRS360G
MBRS380G
MBRS3100G
MBRS3150G
MBRS3200G
V
*
RRM
1
(V)
20
30
40
50
60
80
100
150
200
V
*
RMS
2
(V)
14
21
28
35
42
56
70
105
140
V
*
R
3
(V)
20
30
40
50
60
80
100
150
200
V
*
F
4
(V)
0.50
0.70
0.85
0.92
Operating
temperature
TJ, (OC)
-55 to +125
-55 to +150
@ 2010 Copyright By American First Semiconductor
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage@IF=3.0A
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部品番号部品説明メーカ
MBRS350G

(MBRS320G - MBRS3200G) 3.0A Surface Mount Schottky Barrier Rectifiers

American First Semiconductor
American First Semiconductor


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