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MBRS150G の電気的特性と機能

MBRS150GのメーカーはAmerican First Semiconductorです、この部品の機能は「(MBRS120G - MBRS1200G) 1.0A Surface Mount Schottky Barrier Rectifiers」です。


製品の詳細 ( Datasheet PDF )

部品番号 MBRS150G
部品説明 (MBRS120G - MBRS1200G) 1.0A Surface Mount Schottky Barrier Rectifiers
メーカ American First Semiconductor
ロゴ American First Semiconductor ロゴ 




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MBRS150G Datasheet, MBRS150G PDF,ピン配置, 機能
Chip Schottky Barrier Rectifier
MBRS120G THRU MBRS1200G
1.0A Surface Mount Schottky Barrier
Rectifiers -20V-200V
Features
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
optimize board space.
Low power loss, high efficiency.
High current capability, low forward voltage drop.
High surge capability.
Guardring for overvoltage protection.
Ultra high-speed switching.
Silicon epitaxial planar chip, metal silicon junction.
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
Suffix "-H" indicates Halogen-free parts, ex. MBRS120G-H.
Mechanical data
Epoxy: UL94-V0 rated frame retardant
Case: Molded plastic, DO-214AC / SMA
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity: lndicated by cathode band
Mounting Position: Any
Weight: Approximated 0.05 gram
Package outline
SMA
0.196(4.9)
0.180(4.5)
0.012(0.3) Typ.
0.106(2.7)
0.091(2.3)
0.032(0.8) Typ.
0.068(1.7)
0.060(1.5)
0.032 (0.8) Typ.
Dimensions in inches and (millimeters)
Maximum ratings (AT T A=25oC unless otherwise noted)
PARAMETER
CONDITIONS
Forward rectified current
See Fig.1
Forward surge current
Reverse current
Thermal resistance
Diode junction capacitance
Storage temperature
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
VR = VRRM TJ = 25OC
VR = VRRM TJ = 100OC
Junction to ambient
f=1MHz and applied 4V DC reverse voltage
SYMBOL MIN.
IO
TYP.
MAX. UNIT
1.0 A
IFSM 30 A
IR
RθJA
CJ
TSTG
0.5
mA
10
88 OC/W
120 pF
-65 +175 OC
SYMBOLS
MBRS120G
MBRS130G
MBRS140G
MBRS150G
MBRS160G
MBRS180G
MBRS1100G
MBRS1150G
MBRS1200G
V
*
RRM
1
(V)
20
30
40
50
60
80
100
150
200
V
*
RMS
2
(V)
14
21
28
35
42
56
70
105
140
V
*
R
3
(V)
20
30
40
50
60
80
100
150
200
V
*
F
4
(V)
0.50
0.70
0.85
0.92
Operating
temperature
TJ, (OC)
-55 to +125
-55 to +150
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage@IF=1.0A
@ 2010 Copyright By American First Semiconductor
Page 1/2

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部品番号部品説明メーカ
MBRS150G

(MBRS120G - MBRS1200G) 1.0A Surface Mount Schottky Barrier Rectifiers

American First Semiconductor
American First Semiconductor


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