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Número de pieza | MBR0530G | |
Descripción | (MBR0520G - MBR0540G) 0.5A Surface Mount Schottky Barrier Rectifiers | |
Fabricantes | American First Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MBR0530G (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! Low VF Chip Schottky Barrier Rectifier
MBR0520G THRU MBR0504G
0.5A Surface Mount Schottky Barrier
Rectifiers - 20V- 40V
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
• Tiny plastic SMD package.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500/228
• Suffix "-H" indicates Halogen free parts, ex. MBR0520G-H.
Package outline
SOD-123
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Mechanical data
• Epoxy: UL94-V0 rated frame retardant
• Case: Molded plastic, SOD-123
• Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
• Polarity: lndicated by cathode band
• Mounting Position: Any
• Weight: Approximated 0.011 gram
Dimensions in inches and (millimeters)
Maximum ratings (AT TA=25oC unless otherwise noted)
PARAMETER
CONDITIONS
Forward rectified current
See Fig.2
Forward surge current
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
Reverse current
Thermal resistance
Diode junction capacitance
Storage temperature
VR = VRRM TJ = 25OC
Junction to ambient
f=1MHz and applied 4V DC reverse voltage
Symbol
IO
IFSM
MIN.
TYP.
MAX. UNIT
0.5 A
15 A
IR
RθJA
CJ
TSTG
1.0 mA
42 OC/W
130 pF
-65 +175 OC
SYMBOLS
MBR0520G
MBR0530G
MBR0540G
V
*
RRM
1
(V)
20
30
40
V
*
RMS
2
(V)
14
21
28
V
*
R
3
(V)
20
30
40
V
*
F
4
(V)
0.38
0.40
0.40
Operating
temperature
TJ, (OC)
-55 to +100
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage@IF=0.5A
@ 2010 Copyright By American First Semiconductor
Page 1/2
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet MBR0530G.PDF ] |
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