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HER501G の電気的特性と機能

HER501GのメーカーはAmerican First Semiconductorです、この部品の機能は「(HER501G - HER508G) 5.0A Leaded Type Fast Recovery Effciency Rectifiers」です。


製品の詳細 ( Datasheet PDF )

部品番号 HER501G
部品説明 (HER501G - HER508G) 5.0A Leaded Type Fast Recovery Effciency Rectifiers
メーカ American First Semiconductor
ロゴ American First Semiconductor ロゴ 




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HER501G Datasheet, HER501G PDF,ピン配置, 機能
Silicon Rectifier
HER501G THRU HER508G
5.0A Leaded Type Fast Recovery
Effciency Rectifiers-50V-1000V
Features
Axial lead type devices for through hole design.
5.0A operating at TA=55°C without thermal run away
High current capability.
Ultrafast recovery time for high efficiency.
High surge capability.
Glass passivated chip junction.
Lead-free parts meet RoHS requirments.
Suffix "-H" indicates Halogen free parts, ex. HER501G-H.
Mechanical data
Epoxy : UL94-V0 rated flame retardant
Case : Molded plastic, DO-201AD
Lead: Axial leads, solderable per MIL-STD-202,
Method 208 guranteed
Polarity: Color band denotes cathode end
Mounting Position : Any
Weight : Approximated 1.10 gram
Package outline
DO-201AD
.220(5.6)
.197(5.0)
DIA.
.052(1.3)
.048(1.2)
DIA.
1.0(25.4)
MIN.
.375(9.5)
.285(7.2)
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
Maximum ratings (AT TA=25oC unless otherwise noted)
PARAMETER
CONDITIONS
Forward rectified current
Ambient temperature = 50OC
Forward surge current
Reverse current
Diode junction capacitance
Storage temperature
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
VR = VRRM TJ = 25OC
VR = VRRM TJ = 125OC
f=1MHz and applied 4V DC reverse voltage
Symbol MIN. TYP. MAX. UNIT
IO 5.0 A
IFSM 200 A
5.0
IR
μA
100
CJ 75 pF
TSTG
-65
+175 OC
SYMBOLS
V
*
RRM
1
(V)
V
RM
*
S
2
(V)
V
*
R
3
(V)
V
*
F
4
(V)
T
R
*
R
5
(nS)
HER501G
HER502G
HER503G
HER504G
HER505G
HER506G
50
100
200
300
400
600
35 50
70 100
140 200
210 300
280 400
420 600
1.00
1.30
50
HER507G
HER508G
800
1000
560
700
800
1000
1.85
75
Note 1. Reverse recovery time test condition, IF=0.5A, IR=1.0A, IRR=0.25A
Operating
temperature
TJ, (OC)
-55 to +150
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage@IF=5.0A
*5 Maximum Reverse recovery time, note 1
@ 2010 Copyright By American First Semiconductor
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