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1N5401G の電気的特性と機能

1N5401GのメーカーはAmerican First Semiconductorです、この部品の機能は「(1N5400G - 1N5408G) 3.0A Leaded Type Glass Purpose Rectifiers」です。


製品の詳細 ( Datasheet PDF )

部品番号 1N5401G
部品説明 (1N5400G - 1N5408G) 3.0A Leaded Type Glass Purpose Rectifiers
メーカ American First Semiconductor
ロゴ American First Semiconductor ロゴ 




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1N5401G Datasheet, 1N5401G PDF,ピン配置, 機能
Slilcon Rectifier
3.0A Leaded Type Glass Purpose
Rectifiers - 50V-1000V
Features
Axial lead type devices for through hole design.
High current capability.
High surge capability.
Glass passivated chip junction inside.
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
Suffix "-H" indicates Halogen-free parts, ex. 1N5400G-H.
Mechanical data
Epoxy : UL94-V0 rated flame retardant
Case : Molded plastic, DO-201AD
Lead: Axial leads, solderable per MIL-STD-202,
Method 208 guranteed
Polarity: Color band denotes cathode end
Mounting Position : Any
Weight : Approximated 1.10 gram
1N5400G THRU 1N5408G
Package outline
DO-201AD
.220(5.6)
.197(5.0)
DIA.
.052(1.3)
.048(1.2)
DIA.
1.0(25.4)
MIN.
.375(9.5)
.285(7.2)
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
Maximum ratings (AT T =25oC unless otherwise noted)
PARAMETER
Forward rectified current
See Fig.2
CONDITIONS
Forward surge current
Reverse current
Thermal resistance
Diode junction capacitance
Storage temperature
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
VR = VRRM TJ = 25OC
VR = VRRM TJ = 100OC
Junction to ambient
f=1MHz and applied 4V DC reverse voltage
Symbol MIN. TYP. MAX. UNIT
IO 3.0 A
IFSM 125 A
5.0
IR
μA
50
RθJA
CJ
30 OC/W
40 pF
TSTG
-65
+175 OC
SYMBOLS
1N5400G
1N5401G
1N5402G
1N5404G
1N5406G
1N5407G
1N5408G
V
*
RRM
1
(V)
50
100
200
400
600
800
1000
V
*
RMS
2
(V)
35
70
140
280
420
560
700
V
*
R
3
(V)
50
100
200
400
600
800
1000
V
*
F
4
(V)
Operating
temperature
TJ, (OC)
1.10 -55 to +125
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage@IF=3.0A
@ 2010 Copyright By American First Semiconductor
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共有リンク

Link :


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