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PDF 1N4006G Data sheet ( Hoja de datos )
| Número de pieza | 1N4006G | |
| Descripción | (1N4001G - 1N4007G) 1.0A Leaded Type Glass Passivated General Purpose Rectifiers | |
| Fabricantes | American First Semiconductor | |
| Logotipo |  |
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Glass Passivated Rectifier
1.0A Leaded Type Glass Passivated
General Purpose Rectifiers - 50V-1000V
Features
• Axial lead type devices for through hole design.
• High current capability.
• High surge capability.
• Glass passivated chip junction inside.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• Suffix "-H" indicates Halogen-free parts, ex. 1N4001G-H.
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, DO-41
• Lead: Axial leads, solderable per MIL-STD-202,
Method 208 guranteed
• Polarity: Color band denotes cathode end
• Mounting Position : Any
• Weight : Approximated 0.33 gram
1N4001G THRU 1N4007G
Package outline
DO-41
.107(2.7)
.080(2.0)
DIA.
.034(.9)
.028(.7)
DIA.
1.0(25.4)
MIN.
.205(5.2)
.166(4.2)
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
Maximum ratings (AT T =25oC unless otherwise noted)
PARAMETER
Forward rectified current
Forward surge current
Reverse current
Thermal resistance
Diode junction capacitance
Storage temperature
See Fig.2
CONDITIONS
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
VR = VRRM TJ = 25OC
VR = VRRM TJ = 125OC
Junction to ambient, note 2
f=1MHz and applied 4V DC reverse voltage
Symbol MIN. TYP. MAX. UNIT
IO 1.0 A
IFSM 30 A
5.0
IR
μA
50
RθJA
CJ
45 OC/W
10 pF
TSTG
-65
+175 OC
SYMBOLS
V
*
RRM
1
(V)
V
RM
*
S
2
(V)
V
*
R
3
(V)
V
*
F
4
(V)
T
*5
RR
(μs)
1N4001G
50
35
50
1N4002G
100
70
100
1N4003G
200
140
200
1N4004G
400
280
400
1.10 1.8
1N4005G
600
420
600
1N4006G
800
560
800
1N4007G 1000 700
1000
Notes: 1. Reverse recovery time test condition, IF=0.5A, IR=1.0A, IRR=0.25A
2. Thermal resistance from junction to ambient
Operating
temperature
TJ, (OC)
-55 to +150
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage@IF=1.0A
*5 Typical reverse recovery time, note 1
@ 2010 Copyright By American First Semiconductor
Page 1/2
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| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 1N4006G.PDF ] | |
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