DataSheet.jp

H30T90 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 H30T90
部品説明 IGBT
メーカ Infineon Technologies
ロゴ Infineon Technologies ロゴ 



Total 12 pages
		

No Preview Available !

H30T90 Datasheet, H30T90 PDF,ピン配置, 機能
Soft Switching Series
IHW30N90T
q
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology
with anti-parallel diode
Features:
1.1V Forward voltage of antiparallel diode
TrenchStop® and Fieldstop technology for 900 V applications offers
:
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- easy parallel switching capability due to positive
temperature coefficient in VCE(sat)
Low EMI
Qualified according to JEDEC1 for target applications
Application specific optimisation of inverse diode
Pb-free lead plating; RoHS compliant
G
PG-TO-247-3
C
E
Applications:
Microwave Oven
Soft Switching Applications for ZCS
Type
IHW30N90T
VCE
900V
IC
30A
VCE(sat),Tj=25°C
1.5V
Tj,max
175°C
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area VCE 900V, Tj 175°C
Diode forward current
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Transient Gate-emitter voltage (tp < 5 ms)
Power dissipation, TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Marking
H30T90
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
VGE
Ptot
Tj
Tstg
-
Package
PG-TO-247-3
Value
900
60
30
90
90
23
13
36
±20
±25
428
-40...+175
-55...+175
260
Unit
V
A
V
W
°C
°C
1 J-STD-020 and JESD-022
Power Semiconductors
1
Rev. 2.3 Nov 08

1 Page





ページ 合計 : 12 ページ
PDF
ダウンロード
[ H30T90.PDF ]

共有リンク

Link :

おすすめデータシート

部品番号部品説明メーカ
H30T90

IGBT

Infineon Technologies
Infineon Technologies

www.DataSheet.jp    |   2019   |  メール    |   最新    |   Sitemap