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83T03GH-HF の電気的特性と機能

83T03GH-HFのメーカーはAdvanced Power Electronicsです、この部品の機能は「AP83T03GH-HF」です。


製品の詳細 ( Datasheet PDF )

部品番号 83T03GH-HF
部品説明 AP83T03GH-HF
メーカ Advanced Power Electronics
ロゴ Advanced Power Electronics ロゴ 




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83T03GH-HF Datasheet, 83T03GH-HF PDF,ピン配置, 機能
Advanced Power
Electronics Corp.
AP83T03GH/J-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low On-resistance
D
Simple Drive Requirement
Fast Switching Characteristic
G
RoHS Compliant & Halogen-Free
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP83T03GJ) is
available for low-profile applications.
Absolute Maximum Ratings
Symbol
Parameter
VDS Drain-Source Voltage
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
BVDSS
RDS(ON)
ID
30V
6mΩ
75A
G
D
S
TO-252(H)
G
D
S
TO-251(J)
Rating
30
+20
75
53
240
60
-55 to 175
-55 to 175
Units
V
V
A
A
A
W
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
2.5
62.5
110
Units
/W
/W
/W
1
201003052

1 Page





83T03GH-HF pdf, ピン配列
200
T C =25 o C
160
120
80
10V
7.0V
6.0V
5.0V
V G = 4.0V
40
0
0 4 8 12 16
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
9
I D =30A
T C =25 o C
8
7
6
5
4
2 4 6 8 10
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
40
30
T j =175 o C
T j =25 o C
20
10
0
0 0.2 0.4 0.6 0.8 1 1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
AP83T03GH/J-HF
120
T C =175 o C
10V
7.0V
100 6.0V
5.0V
80 V G =4.0V
60
40
20
0
02468
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0
I D =40A
V G =10V
1.6
1.2
0.8
0.4
-50
0
50 100 150
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
200
1.2
0.8
0.4
0.0
-50
0
50 100 150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
200
3


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共有リンク

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部品番号部品説明メーカ
83T03GH-HF

AP83T03GH-HF

Advanced Power Electronics
Advanced Power Electronics


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