|
|
FGH75N60UFTUのメーカーはFairchild Semiconductorです、この部品の機能は「75A Field Stop IGBT」です。 |
部品番号 | FGH75N60UFTU |
| |
部品説明 | 75A Field Stop IGBT | ||
メーカ | Fairchild Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとFGH75N60UFTUダウンロード(pdfファイル)リンクがあります。 Total 8 pages
FGH75N60UF
600V, 75A Field Stop IGBT
Features
• High Current Capability
• Low Saturation Voltage: VCE(sat) =1.9V @ IC = 75A
• High Input Impedance
• Fast Switching
• RoHS Compliant
Applications
• Induction Heating, UPS, SMPS, PFC
April 2009
tm
General Description
Using Novel Field Stop IGBT Technology, Fairchild’s new
series of Field Stop IGBTs offer the optimum performance for
Induction Heating, UPS, SMPS and PFC applications where low
conduction and switching losses are essential.
E
C
G
COLLECTOR
(FLANGE)
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RJC(IGBT)
RJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Ratings
600
20
150
75
225
452
181
-55 to +150
-55 to +150
300
Typ.
-
-
Max.
0.276
40
Units
V
V
A
A
A
W
W
oC
oC
oC
Units
oC/W
oC/W
©2009 Fairchild Semiconductor Corporation
FGH75N60UF Rev. A1
1
www.fairchildsemi.com
1 Page Typical Performance Characteristics
Figure 1. Typical Output Characteristics
225
TC = 25oC
180
15V
20V
12V
10V
135
Figure 2. Typical Output Characteristics
225
TC = 125oC
180
20V 15V
12V
10V
135
90 90
45
VGE = 8V
45
VGE = 8V
0
012345
Collector-Emitter Voltage, VCE [V]
Figure 3. Typical Saturation Voltage
Characteristics
225
Common Emitter
VGE = 15V
180 TC = 25oC
TC = 125oC
135
6
90
0
0.0 1.5 3.0 4.5
Collector-Emitter Voltage, VCE [V]
Figure 4. Transfer Characteristics
6.0
225
Common Emitter
100
VCE = 20V
TC = 25oC
TC = 125oC
10
45
0
01234
Collector-Emitter Voltage, VCE [V]
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
3.6
Common Emitter
VGE = 15V
3.0
150A
2.4
75A
1.8
IC = 40A
1.2
25 50 75 100 125
Collector-EmitterCase Temperature, TC [oC]
1
2 4 6 8 10 12
Gate-Emitter Voltage,VGE [V]
Figure 6. Saturation Voltage vs. VGE
20
Common Emitter
TC = -40oC
16
12
8
4 150A
75A
IC = 40A
0
0 4 8 12 16 20
Gate-Emitter Voltage, VGE [V]
FGH75N60UF Rev. A1
3
www.fairchildsemi.com
3Pages Typical Performance Characteristics
Figure 19. Turn off Switching SOA Characteristics
500
100
10
Safe Operating Area
VGE = 15V, TC = 125oC
1
1 10
100
Collector-Emitter Voltage, VCE [V]
1000
Figure 20. Transient Thermal Impedance of IGBT
1
0.5
0.1
0.2
0.1
0.05
0.01 0.02
0.01
single pulse
1E-3
1E-5
1E-4
PDM
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E-3
0.01
0.1
Rectangular Pulse Duration [sec]
1
10
FGH75N60UF Rev. A1
6
www.fairchildsemi.com
6 Page | |||
ページ | 合計 : 8 ページ | ||
|
PDF ダウンロード | [ FGH75N60UFTU データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
FGH75N60UFTU | 75A Field Stop IGBT | Fairchild Semiconductor |