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PDF FGH75T65UPD Data sheet ( Hoja de datos )
| Número de pieza | FGH75T65UPD | |
| Descripción | 75A Field Stop Trench IGBT | |
| Fabricantes | Fairchild Semiconductor | |
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August 2012
FGH75T65UPD
650V, 75A Field Stop Trench IGBT
Features
• Maximum Junction Temperature : TJ = 175oC
• Positive Temperaure Co-efficient for easy parallel operating
• High current capability
• Low saturation voltage: VCE(sat) = 1.65V(Typ.) @ IC = 75A
• High input impedance
• Tightened Parameter Distribution
• RoHS compliant
• Short Circuit Ruggedness > 5us @25oC
General Description
Using Novel Field Stop Trench IGBT Technology, Fairchild’s
new series of Field Stop Trench IGBTs offer the optimum perfor-
mance for Solar Inverter , UPS and Digital Power Generator
where low conduction and switching losses are essential.
Applications
• Solar Inverter, UPS, Digital Power Generator
E
C
G
COLLECTOR
(FLANGE)
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM(1)
PD
SCWT
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
@ TC = 25oC
@ TC = 100oC
Pulsed Collector Current
Diode Forward Current
Diode Forward Current
@ TC = 25oC
@ TC = 100oC
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Short Circuit Withstand Time
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(Diode)
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
©2012 Fairchild Semiconductor Corporation
FGH75T65UPD Rev. C0
1
C
G
E
Ratings
650
± 20
150
75
225
75
50
225
375
187
5
-55 to +175
-55 to +175
300
Units
V
V
A
A
A
A
A
A
W
W
us
oC
oC
oC
Typ.
-
-
-
Max.
0.40
0.86
40
Units
oC/W
oC/W
oC/W
www.fairchildsemi.com
1 page  
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20
Common Emitter
TC = 25oC
16
150A
12
75A
8
IC = 40A
4
0
4 8 12 16 20
Gate-Emitter Voltage, VGE [V]
Figure 9. Capacitance Characteristics
10000
Cies
1000
Coes
Common Emitter
100 VGE = 0V, f = 1MHz
TC = 25oC
Cres
50
1 10
Collector-Emitter Voltage, VCE [V]
Figure 11. SOA Characteristics
30
500
10µs
100
100µs
10 1ms
10 ms
DC
1 *Notes:
1. TC = 25oC
2. TJ < 175oC
3. Single Pulse
0.1
1 10
100
Collector-Emitter Voltage, VCE [V]
1000
Figure 8. Saturation Voltage vs. VGE
20
Common Emitter
TC = 175oC
16
12
75A
150A
8
IC = 40A
4
0
4 8 12 16 20
Gate-Emitter Voltage, VGE [V]
Figure 10. Gate charge Characteristics
15
12
400V
200V
VCC = 300V
9
6
3
Common Emitter
TC = 25oC
0
0 70 140 210 280 350 420
Gate Charge, Qg [nC]
Figure 12. Turn-on Characteristics vs.
Gate Resistance
1000
Common Emitter
VCC = 400V, VGE = 15V
IC = 75A
TC = 25oC
TC = 175oC
td(on)
100
tr
10
0 10 20 30 40 50
Gate Resistance, RG [Ω]
FGH75T65UPD Rev. C0
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet FGH75T65UPD.PDF ] | |
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