|
|
IRFB4212PbFのメーカーはInternational Rectifierです、この部品の機能は「Digital Audiio MOSFET」です。 |
部品番号 | IRFB4212PbF |
| |
部品説明 | Digital Audiio MOSFET | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRFB4212PbFダウンロード(pdfファイル)リンクがあります。 Total 7 pages
DIGITAL AUDIO MOSFET
PD - 96918A
IRFB4212PbF
Features
• Key parameters optimized for Class-D audio
amplifier applications
• Low RDSON for improved efficiency
• Low QG and QSW for better THD and improved
efficiency
• Low QRR for better THD and lower EMI
• 175°C operating junction temperature for
ruggedness
• Can deliver up to 150W per channel into 4Ω load in
half-bridge topology
Key Parameters
VDS
RDS(ON) typ. @ 10V
Qg typ.
Qsw typ.
RG(int) typ.
TJ max
100
72.5
15
8.3
2.2
175
D
G
V
m:
nC
nC
Ω
°C
S TO-220AB
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes
the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode
reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance
factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction
temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient,
robust and reliable device for ClassD audio amplifier applications.
Absolute Maximum Ratings
Parameter
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current c
Power Dissipation f
Power Dissipation f
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Max.
100
±20
18
13
57
60
30
0.4
-55 to + 175
300
10lbxin (1.1Nxm)
Units
V
A
W
W/°C
°C
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Junction-to-Case f
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient f
Notes through
are on page 2
www.irf.com
Typ.
–––
0.50
–––
Max.
2.5
–––
62
Units
°C/W
1
9/16/05
1 Page 100
TOP
BOTTOM
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
10
6.0V
IRFB4212PbF
100
TOP
BOTTOM
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
10
6.0V
1
0.1
≤ 60µs PULSE WIDTH
Tj = 25°C
1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100.0
10.0 TJ = 175°C
1
0.1
≤ 60µs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
3.0
ID = 13A
VGS = 10V
2.5
2.0
1.0 TJ = 25°C
0.1
2
VDS = 50V
≤ 60µs PULSE WIDTH
468
VGS, Gate-to-Source Voltage (V)
10
Fig 3. Typical Transfer Characteristics
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
10000
1000
100
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
20
ID= 13A
16
12
VDS= 80V
VDS= 50V
VDS= 20V
8
4
10
1
10 100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
www.irf.com
0
0 5 10 15 20 25
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
3
3Pages IRFB4212PbF
+
-
RG
D.U.T +
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
Circuit Layout Considerations
• Low Stray Inductance
-
• Ground Plane
• Low Leakage Inductance
Current Transformer
- +
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
• dv/dt controlled by RG
• Driver same type as D.U.T.
VDD
+
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
-
Re-Applied
Voltage
Body Diode
IInndduuccttoor Currerennt t
Forward Drop
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
*VGS=10V
VDD
ISD
V(BR)DSS
15V tp
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
IAS
0.01Ω
+
-
VDD
A
Fig 17a. Unclamped Inductive Test Circuit
IAS
Fig 17b. Unclamped Inductive Waveforms
VDS
LD
+
VDD -
VGS
Pulse Width < 1µs
Duty Factor < 0.1%
D.U.T
Fig 18a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 18b. Switching Time Waveforms
Id
Vds
Vgs
L
VCC
DUT
0
1K
Vgs(th)
Fig 19a. Gate Charge Test Circuit
6
Qgs1 Qgs2 Qgd
Qgodr
Fig 19b Gate Charge Waveform
www.irf.com
6 Page | |||
ページ | 合計 : 7 ページ | ||
|
PDF ダウンロード | [ IRFB4212PbF データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
IRFB4212PbF | Digital Audiio MOSFET | International Rectifier |