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Datasheet IKW25N120H3 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | IKW25N120H3 | IGBT, Insulated Gate Bipolar Transistor IGBT
HighspeedDuoPack:IGBTinTrenchandFieldstoptechnologywithsoft,fastrecovery anti-paralleldiode
IKW25N120H3
1200Vhighspeedswitchingseriesthirdgeneration
Datasheet
IndustrialPowerControl
IKW25N120H3
Highspeedswitchingseriesthirdgeneration
HighspeedDuoPack:IGBTinTre |  Infineon Technologies | igbt |
IKW Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | IKW03N120H2 | HighSpeed 2-Technology IKP03N120H2, IKW03N120H2
IKB03N120H2
HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
• Designed for: - SMPS - Lamp Ballast - ZVS-Converter 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - t Infineon Technologies data | | |
| 2 | IKW08T120 | IGBT, Insulated Gate Bipolar Transistor TrenchStop® Series
IKW08T120
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft,
fast recovery anti-parallel Emitter Controlled HE diode
C
Approx. 1.0V reduced VCE(sat) and 0.5V reduced VF compared to BUP305D
Short circuit withstand time – 10s
Designed Infineon Technologies igbt | | |
| 3 | IKW15N120H3 | IGBT, Insulated Gate Bipolar Transistor IGBT
HighspeedDuoPack:IGBTinTrenchandFieldstoptechnologywithsoft,fastrecovery anti-paralleldiode
IKW15N120H3
1200Vhighspeedswitchingseriesthirdgeneration
Datasheet
IndustrialPowerControl
IKW15N120H3
Highspeedswitchingseriesthirdgeneration
HighspeedDuoPack:IGBTinTre  Infineon igbt | | |
| 4 | IKW15N120T2 | IGBT, Insulated Gate Bipolar Transistor IKW15N120T2
TrenchStop® 2nd generation Series
Low Loss DuoPack : IGBT in 2nd generation TrenchStop® technology
with soft, fast recovery anti-parallel Emitter Controlled Diode
C
Short circuit withstand time – 10s
Designed for :
- Frequency Converters
- Uninterrupted Power Supply Infineon igbt | | |
| 5 | IKW15T120 | LOW LOSS DUOPACK : IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY WITH SOFT/FAST RECOVERY ANTI-PARALLEL EMCON HE DIODE Infineon Technologies igbt | | |
| 6 | IKW20N60H3 | IGBT, Insulated Gate Bipolar Transistor IGBT
HighspeedDuoPack:IGBTinTrenchandFieldstoptechnology withsoft,fastrecoveryanti-paralleldiode
IKW20N60H3
600Vhighspeedswitchingseriesthirdgeneration
Datasheet
IndustrialPowerControl
IKW20N60H3
Highspeedswitchingseriesthirdgeneration
HighspeedDuoPack:IGBTinTrench Infineon Technologies igbt | | |
| 7 | IKW20N60T | IGBT, Insulated Gate Bipolar Transistor IKW20N60T
TRENCHSTOP™ Series
Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
Features:
Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time 5s
Designed Infineon Technologies igbt | |
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