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What is 2SD2098?

This electronic component, produced by the manufacturer "SeCoS", performs the same function as "NPN Silicon Epitaxial PlanarTransistor".


2SD2098 Datasheet PDF - SeCoS

Part Number 2SD2098
Description NPN Silicon Epitaxial PlanarTransistor
Manufacturers SeCoS 
Logo SeCoS Logo 


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Elektronische Bauelemente
Description
The 2SD2098 is an epitaxial planar
type NPN silicon transistor.
2SD2098
NPN Silicon
Epitaxial Planar Transistor
RoHS Compliant Product
SOT-89
Features
* Excellent DC Current Gain Characteristics
* Low Saturation Voltage, Typically VCE(SAT)=0.25V
At IC/IB=4A/0.1A
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
4.4 4.6
4.05 4.25
1.50 1.70
1.30 1.50
2.40 2.60
0.89 1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min. Max.
3.00 REF.
1.50 REF.
0.40 0.52
1.40 1.60
0.35 0.41
5 TYP.
0.70 REF.
Absolute Maximum Ratings at TA=25oC
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current (DC)
ICP Collector Current (Pulse)* 1
PD Total Power Dissipation
TJ,Tstg
Junction and Storage Temperature
*1: Single pulse, PW=10ms
*2: When mounted on a 40*40*0.7mm ceramic board
Value
50
20
6
5
10
0.5 (2.0*2 )
-55~+150
Units
V
V
V
A
A
W
CO
ELECTRICAL CHARACTERISTICS Tamb=25oC unless otherwise specified
Parameter
Symbol Min Typ. Max
Collector-Base Breakdown Voltage
BVCBO
50
-
-
Collector-Emitter Breakdown Voltage
BVCEO
20
-
-
Emitter-Base Breakdown Voltage
BVEBO
6
-
-
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
ICBO - - 0.5
IEBO - - 0.5
Collector Saturation Voltage
*VCE(sat) - 0.25 1
DC Current Gain
Gain-Bandwidth Product
*hFE 120 - 390
fT - 150 -
Output Capacitance
Cob - 30 -
* Measured under pulse condition.Pulse width 300µs, Duty Cycle 2%
Unit
V
V
V
uA
uA
V
MHz
pF
Test Conditions
I C=50 µA,IE=0
IC=1mA,IB=0
I E=50 µA,IC=0
VCB=4 0V,IE=0
VEB=5V,IC=0
IC=4A,IB=0.1 A
VCE= 2 V, IC=0.5 A
VCE= 6 V, IC=50mA,f=100MHz
VCB=20V, f=1MHz,IE=0
Classification of hFE
Rank
Range
Q
120~270
R
180~390
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 3


Part Details

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