DataSheet.jp

IRLR6225TRPbF の電気的特性と機能

IRLR6225TRPbFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRLR6225TRPbF
部品説明 Power MOSFET ( Transistor )
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




このページの下部にプレビューとIRLR6225TRPbFダウンロード(pdfファイル)リンクがあります。

Total 8 pages

No Preview Available !

IRLR6225TRPbF Datasheet, IRLR6225TRPbF PDF,ピン配置, 機能
VDS
RDS(on) max
(@VGS = 4.5V)
RDS(on) max
(@VGS = 2.5V)
Qg (typical)
RG (typical)
ID
Applications
Battery Protection Switch
20 V
4.0 m
5.2 m
48 nC
2.2
42h A
G
PD - 97594
IRLR6225PbF
HEXFET® Power MOSFET
DD
S
G
Gate
S
G
D-Pak
IRLR6225PbF
D
Drain
S
Source
Features and Benefits
Features
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Benefits
Multi-Vendor Compatibility
results in Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
IRLR6225PbF
IRLR6225TRPbF
Package Type
D-PAK
D-PAK
Standard Pack
Form
Quantity
Tube/Bulk
75
Tape and Reel
2000
Note
Absolute Maximum Ratings
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Notes  through † are on page 8
www.irf.com
Max.
20
±12
100h
63h
400
63
25
0.5
-55 to + 150
300 (1.6mm from case)
Units
V
A
W
W/°C
°C
1
11/15/2010

1 Page





IRLR6225TRPbF pdf, ピン配列
1000
100
TOP
BOTTOM
VGS
10V
4.5V
3.5V
3.0V
2.3V
2.0V
1.8V
1.5V
1000
100
10
IRLR6225PbF
TOP
BOTTOM
VGS
10V
4.5V
3.5V
3.0V
2.3V
2.0V
1.8V
1.5V
1.5V
10
0.1
1.5V
1
60µs PULSE WIDTH
Tj = 25°C
10 100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000
100
1
0.1
60µs PULSE WIDTH
Tj = 150°C
1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.6
ID = 42A
VGS = 4.5V
1.4
TJ = 150°C
10
TJ = 25°C
1
VDS = 10V
60µs PULSE WIDTH
0.1
0.0 1.0 2.0 3.0 4.0 5.0
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
1.2
1.0
0.8
0.6
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
100000
10000
1000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
14.0
ID= 17A
12.0
VDS= 16V
10.0
VDS= 10V
VDS= 4.0V
8.0
6.0
4.0
2.0
100
1
10 100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
www.irf.com
0.0
0
25 50 75 100 125
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
3


3Pages


IRLR6225TRPbF 電子部品, 半導体
IRLR6225PbF
+
‚
-

RG
D.U.T +
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
ƒ Circuit Layout Considerations
Low Stray Inductance
-
Ground Plane
Low Leakage Inductance
Current Transformer
-„ +
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
dv/dt controlled by RG
Driver same type as D.U.T.
VDD
+
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
-
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
Ripple 5%
* VGS = 5V for Logic Level Devices
*VGS=10V
VDD
ISD
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
L
VCC
DUT
0
1K S
Fig 17. Gate Charge Test Circuit
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2 Qgd
Qgodr
Fig 18. Gate Charge Waveform
6 www.irf.com

6 Page



ページ 合計 : 8 ページ
 
PDF
ダウンロード
[ IRLR6225TRPbF データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
IRLR6225TRPbF

Power MOSFET ( Transistor )

International Rectifier
International Rectifier


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap