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IRLHM630TRPBF の電気的特性と機能

IRLHM630TRPBFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRLHM630TRPBF
部品説明 Power MOSFET ( Transistor )
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRLHM630TRPBF Datasheet, IRLHM630TRPBF PDF,ピン配置, 機能
VDS
VGS max
RDS(on) max
(@VGS = 4.5V)
RDS(on) max
(@VGS = 2.5V)
Qg (typical)
ID
(@Tc(Bottom) = 25°C)
30 V
±12 V
3.5 mΩ
4.5 mΩ
41 nC
40h A
D5
D6
D7
D8
Applications
Battery Operated DC Motor Inverter MOSFET
Secondary Side Synchronous Rectification MOSFET
IRLHM630PbF
HEXFET® Power MOSFET
4G
3S
2S
1S
PQFN 3.3mm x 3.3mm
Features and Benefits
Features
Low RDSon (<3.5mΩ)
Low Thermal Resistance to PCB (<3.4°C/W)
Low Profile (<1.0mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Benefits
Lower Conduction Losses
Enable better thermal dissipation
results in Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
IRLHM630TRPBF
IRLHM630TR2PBF
Package Type
PQFN 3.3mm x 3.3mm
PQFN 3.3mm x 3.3mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
EOL notice # 259
Absolute Maximum Ratings
Parameter
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
cPulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Notes  through … are on page 9
Max.
30
±12
21
17
40h
40h
160
2.7
37
0.022
-55 to + 150
1 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
Units
V
A
W
W/°C
°C
May 29, 2014

1 Page





IRLHM630TRPBF pdf, ピン配列
IRLHM630PbF
1000
100
10
TOP
BOTTOM
VGS
10V
4.5V
3.5V
2.5V
2.0V
1.6V
1.5V
1.3V
1000
100
TOP
BOTTOM
VGS
10V
4.5V
3.5V
2.5V
2.0V
1.6V
1.5V
1.3V
1 1.3V
0.1
0.1
60μs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1000
10 1.3V
1
0.1
60μs PULSE WIDTH
Tj = 150°C
1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.8
ID = 20A
1.6 VGS = 4.5V
100
TJ = 150°C
10 TJ = 25°C
1.4
1.2
1.0
1.0
1.0
VDS = 15V
60μs PULSE WIDTH
1.5 2.0 2.5
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
0.8
0.6
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
100000
10000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
1000
Coss
Crss
14
ID= 20A VDS= 24V
12 VDS= 15V
10 VDS= 6.0V
8
6
4
2
100
1
10 100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
0
0 20 40 60 80 100 120
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
3 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
May 29, 2014


3Pages


IRLHM630TRPBF 電子部品, 半導体
IRLHM630PbF
+
‚
-

RG
D.U.T +
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
ƒ Circuit Layout Considerations
Low Stray Inductance
-
Ground Plane
Low Leakage Inductance
Current Transformer
-„ +
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
dv/dt controlled by RG
Driver same type as D.U.T.
VDD
+
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
-
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
Ripple 5%
* VGS = 5V for Logic Level Devices
*VGS=10V
VDD
ISD
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
L
VCC
DUT
0
1K S
Fig 17. Gate Charge Test Circuit
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2 Qgd
Qgodr
Fig 18. Gate Charge Waveform
6 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
May 29, 2014

6 Page



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部品番号部品説明メーカ
IRLHM630TRPBF

Power MOSFET ( Transistor )

International Rectifier
International Rectifier


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