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PDF IRLH6224PBF Data sheet ( Hoja de datos )
| Número de pieza | IRLH6224PBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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VDS
Vgs max
RDS(on) max
(@VGS = 4.5V)
(@VGS = 2.5V)
Qg typ
ID
(@Tc(Bottom) = 25°C)
20
± 12
3.0
4.0
44
80i
V
V
mΩ
nC
A
Applications
• Battery Protection Switch
Features and Benefits
Features
Low Thermal Resistance to PCB (< 2.4°C/W)
100% Rg tested
Low Profile (<1.2mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
IRLH6224PbF
HEXFET® Power MOSFET
PQFN 5X6 mm
Benefits
Enable better thermal dissipation
Increased Reliability
results in Increased Power Density
⇒ Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
IRLH6224TRPBF
IRLH6224TR2PBF
Package Type
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
EOL notice # 259
Absolute Maximum Ratings
Parameter
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
ID @ TC = 25°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Max.
20
± 12
28
22
105hi
67h
80i
400
3.6
52
0.029
-55 to + 150
Units
V
A
W
W/°C
°C
Notes through are on page 9
1 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
May 12, 2014
1 page  
IRLH6224PbF
8
ID = 20A
6
4 TJ = 125°C
2
TJ = 25°C
0
0 2 4 6 8 10 12
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
500
ID
400
TOP
5.7A
9.3A
BOTTOM 20A
300
200
100
0
25
50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 13. Maximum Avalanche Energy vs. Drain Current
15V
VDS
L
RG
20V
tp
D.U.T
IAS
0.01Ω
DRIVER
+
-
VDD
A
Fig 14a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 14b. Unclamped Inductive Waveforms
VDS
VGS
RG
RD
D.U.T.
V1G0SV
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
+-VDD
Fig 15a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 15b. Switching Time Waveforms
5 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
May 12, 2014
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRLH6224PBF.PDF ] | |
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