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IRFH7110TRPBF の電気的特性と機能

IRFH7110TRPBFのメーカーはInternational Rectifierです、この部品の機能は「HEXFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFH7110TRPBF
部品説明 HEXFET Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRFH7110TRPBF Datasheet, IRFH7110TRPBF PDF,ピン配置, 機能
IRFH7110PbF
VDS
Vgs max
RDS(on) max
(@VGS = 10V)
QG (typical)
RG (typical)
ID
(@Tc(Bottom) = 25°C)
100
± 20
13.5
58
0.6
50i
V
V
mΩ
nC
Ω
A
HEXFET® Power MOSFET
PQFN 5X6 mm
Applications
Secondary Side Synchronous Rectification
Inverters for DC Motors
DC-DC Brick Applications
Boost Converters
Features and Benefits
Features
Low RDSon (< 13.5mW)
Low Thermal Resistance to PCB (< 1.2°C/W)
Low Profile (<0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Benefits
Lower Conduction Losses
Enables better thermal dissipation
results in Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
IRFH7110TRPBF
IRFH7110TR2PBF
Package Type
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
EOL notice # 259
Absolute Maximum Ratings
Parameter
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
ID @ TC = 25°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Notes  through ‡ are on page 9
Max.
100
± 20
11
8.6
58hi
37h
50i
240
3.6
104
0.029
-55 to + 150
1 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
Units
V
A
W
W/°C
°C
May 13, 2014

1 Page





IRFH7110TRPBF pdf, ピン配列
IRFH7110PbF
1000
100
10
TOP
BOTTOM
VGS
10V
6.0V
5.5V
5.0V
4.8V
4.5V
4.3V
4.0V
1
0.1
0.1
4.0V
60μs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1000
100
10
1
0.1
2.0
TJ = 150°C
TJ = 25°C
VDS = 50V
60μs PULSE WIDTH
3.0 4.0 5.0 6.0
VGS, Gate-to-Source Voltage (V)
7.0
Fig 3. Typical Transfer Characteristics
100000
10000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
1000
100
Ciss
Coss
Crss
1000
100
TOP
BOTTOM
VGS
10V
6.0V
5.5V
5.0V
4.8V
4.5V
4.3V
4.0V
10 4.0V
1
0.1
60μs PULSE WIDTH
Tj = 150°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
2.5
ID = 35A
VGS = 10V
2.0
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
16
ID= 35A
12
VDS= 80V
VDS= 50V
VDS= 20V
8
4
10
1
10
VDS, Drain-to-Source Voltage (V)
100
0
0 20 40 60 80
QG Total Gate Charge (nC)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
3 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
May 13, 2014


3Pages


IRFH7110TRPBF 電子部品, 半導体
IRFH7110PbF
+
‚
-

RG
D.U.T +
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
ƒ Circuit Layout Considerations
Low Stray Inductance
-
Ground Plane
Low Leakage Inductance
Current Transformer
-„ +
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
dv/dt controlled by RG
Driver same type as D.U.T.
VDD
+
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
-
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
Ripple 5%
* VGS = 5V for Logic Level Devices
*VGS=10V
VDD
ISD
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
L
VCC
DUT
0
1K S
Fig 17. Gate Charge Test Circuit
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2 Qgd
Qgodr
Fig 18. Gate Charge Waveform
6 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
May 13, 2014

6 Page



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部品番号部品説明メーカ
IRFH7110TRPBF

HEXFET Power MOSFET

International Rectifier
International Rectifier


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