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PDF IRFH7084TRPbF Data sheet ( Hoja de datos )

Número de pieza IRFH7084TRPbF
Descripción HEXFET Power MOSFET
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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Application
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
DC/DC converters
DC/AC Inverters
Benefits
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant
StrongIRFET™
IRFH7084PbF
HEXFET® Power MOSFET
VDSS
RDS(on) typ.
max
ID (Silicon Limited)
ID (Package Limited)
40V
0.95m
1.25m
265A
100A
PQFN 5X6 mm
Base part number
IRFH7084PbF
Package Type
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFH7084TRPbF
6
ID = 100A
5
4
3
2 TJ = 125°C
1
TJ = 25°C
0
4 8 12 16 20
VGS, Gate-to-Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
300
240 Limited by package
180
120
60
0
25
50 75 100 125
TC , Case Temperature (°C)
150
Fig 2. Maximum Drain Current vs. Case Temperature
1 www.irf.com © 2013 International Rectifier
September 06 , 2013

1 page




IRFH7084TRPbF pdf
IRFH7084PbF
10000
1000
1000
100
10
TJ = 150°C
TJ = 25°C
1
0.1
0.0
VGS = 0V
0.4 0.8 1.2 1.6
VSD, Source-to-Drain Voltage (V)
2.0
Fig 9. Typical Source-Drain Diode Forward Voltage
49
Id = 1.0mA
48
47
46
45
44
43
42
41
40
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Temperature ( °C )
Fig 11. Drain-to–Source Breakdown Voltage
100µsec
100
Limited by
P ac kage
10
1msec
OPERATION IN THIS AREA
LIMITED BY RDS(on)
10msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
DC
0.1
0.1 1 10
VDS, Drain-toSource Voltage (V)
Fig 10. Maximum Safe Operating Area
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
10 20 30
VDS, Drain-to-Source Voltage (V)
40
Fig 12. Typical Coss Stored Energy
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
VGS = 6.0V
VGS = 7.0V
VGS = 10V
VGS = 15V
40 80 120 160
ID, Drain Current (A)
200
5 www.irf.com
Fig 13. Typical On-Resistance vs. Drain Current
© 2013 International Rectifier
September 06, 2013

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