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IRFH5302DPBFのメーカーはInternational Rectifierです、この部品の機能は「HEXFET Power MOSFET」です。 |
部品番号 | IRFH5302DPBF |
| |
部品説明 | HEXFET Power MOSFET | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRFH5302DPBFダウンロード(pdfファイル)リンクがあります。 Total 8 pages
IRFH5302DPbF
VDS
RDS(on) max
(@VGS = 10V)
VSD max
(@IS = 5.0A)
trr (typical)
ID
(@Tc(Bottom) = 25°C)
30 V
2.5 mΩ
0.65
19
h100
V
ns
A
Applications
• Synchronous MOSFET for high frequency buck converters
Features and Benefits
Features
Low RDSon (<2.5mΩ)
Schottky Intrinsic Diode with Low Forward Voltage
Low Thermal Resistance to PCB (<1.2°C/W)
100% Rg tested
Low Profile (<0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
HEXFET® Power MOSFET
PQFN 5X6 mm
Benefits
Lower Conduction Losses
Lower Switching Losses
Increased Power Density
Increased Reliability
results in Increased Power Density
⇒ Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
Package Type
IRFH5302DTRPBF
IRFH5302DTR2PBF
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Qua nti ty
Tape and Reel
4000
Tape and Reel
400
Note
EOL Notice #259
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
hContinuous Drain Current, VGS @ 10V
hContinuous Drain Current, VGS @ 10V
cPulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Notes through are on page 8
Max.
30
± 20
29
23
100
100
400
3.6
104
0.83
-55 to + 150
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Units
V
A
W
W/°C
°C
March 6, 2014
1 Page 1000
100
10
TOP
BOTTOM
VGS
10V
5.0V
4.5V
3.5V
3.3V
3.0V
2.8V
2.5V
1000
100
IRFH5302DPbF
TOP
BOTTOM
VGS
10V
5.0V
4.5V
3.5V
3.3V
3.0V
2.8V
2.5V
1 2.5V
0.1
0.1
≤60µs PULSE WIDTH
Tj = 25°C
1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000
10 2.5V
≤60µs PULSE WIDTH
Tj = 150°C
1
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.8
ID = 50A
1.6 VGS = 10V
100
TJ = 150°C
TJ = 25°C
10
1.4
1.2
1.0
VDS = 15V
≤60µs PULSE WIDTH
1.0
123456
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
0.8
0.6
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
100000
10000
1000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
14.0
ID= 50A
12.0
VDS= 24V
10.0
VDS= 15V
VDS= 6.0V
8.0
6.0
4.0
2.0
100
1
10 100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
0.0
0
20 40 60 80
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
3 www.irf.com © 2014 International Rectifier
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March 6, 2014
3Pages IRFH5302DPbF
+
-
RG
D.U.T +
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
Circuit Layout Considerations
• Low Stray Inductance
-
• Ground Plane
• Low Leakage Inductance
Current Transformer
- +
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
• dv/dt controlled by RG
• Driver same type as D.U.T.
VDD
+
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
-
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
*VGS=10V
VDD
ISD
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
L
VCC
DUT
0
1K S
Fig 17. Gate Charge Test Circuit
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2 Qgd
Qgodr
Fig 18. Gate Charge Waveform
6 www.irf.com © 2014 International Rectifier
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March 6, 2014
6 Page | |||
ページ | 合計 : 8 ページ | ||
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部品番号 | 部品説明 | メーカ |
IRFH5302DPBF | HEXFET Power MOSFET | International Rectifier |