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IRFH5025TRPBFのメーカーはInternational Rectifierです、この部品の機能は「HEXFET Power MOSFET」です。 |
部品番号 | IRFH5025TRPBF |
| |
部品説明 | HEXFET Power MOSFET | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRFH5025TRPBFダウンロード(pdfファイル)リンクがあります。 Total 8 pages
VDS
RDS(on) max
(@VGS = 10V)
Qg (typical)
RG (typical)
ID
(@Tc(Bottom) = 25°C)
250 V
100 mΩ
37 nC
1.6 Ω
25 A
Applications
• Secondary Side Synchronous Rectification
• Inverters for DC Motors
• DC-DC Brick Applications
• Boost Converters
Features and Benefits
Features
Low RDSon
Low Thermal Resistance to PCB (≤ 0.8°C/W)
100% Rg tested
Low Profile (≤ 0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
IRFH5025PbF
HEXFET® Power MOSFET
PQFN 5X6 mm
Benefits
results in
⇒
Lower Conduction Losses
Enable better thermal dissipation
Increased Reliability
Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
IRFH5025TRPBF
IRFH5025TR2PBF
Package Type
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Absolute Maximum Ratings
Parameter
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
ID @ TC(Top) = 25°C
ID @ TC(Top) = 100°C
IDM
PD @TA = 25°C
PD @ TC(Top) = 25°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
gPower Dissipation
fPower Dissipation
fLinear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Notes through
are on page 8
Max.
250
± 20
3.8
3.1
25
16
5.7
3.7
46
3.6
8.3
0.07
-55 to + 150
Note
EOL notice # 259
Units
V
A
W
W/°C
°C
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May 12, 2014
1 Page IRFH5025PbF
100
VGS
TOP
10V
10
8.0V
7.0V
6.0V
5.5V
1
5.0V
4.8V
BOTTOM 4.5V
0.1
100
VGS
TOP
10V
8.0V
7.0V
6.0V
5.5V
10
5.0V
4.8V
BOTTOM 4.5V
0.01 1
0.001
0.0001
0.1
4.5V
≤ 60μs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
100
10
1
0.1
0.01
3.0
TJ = 150°C
TJ = 25°C
VDS = 50V
≤ 60μs PULSE WIDTH
4.0 5.0 6.0 7.0
VGS, Gate-to-Source Voltage (V)
8.0
Fig 3. Typical Transfer Characteristics
100000
10000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
1000
Ciss
0.1
0.1
4.5V
≤ 60μs PULSE WIDTH
Tj = 150°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
2.5
ID = 5.7A
2.0 VGS = 10V
1.5
1.0
0.5
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance Vs. Temperature
16
ID= 5.7A
12
VDS= 200V
VDS= 125V
VDS= 50V
8
Coss
100
Crss
4
10
1
10 100
VDS, Drain-to-Source Voltage (V)
1000
0
0 10 20 30 40 50
QG Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs.Gate-to-Source Voltage
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May 12, 2014
3Pages IRFH5025PbF
+
-
RG
D.U.T +
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
Circuit Layout Considerations
• Low Stray Inductance
-
• Ground Plane
• Low Leakage Inductance
Current Transformer
- +
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
• dv/dt controlled by RG
• Driver same type as D.U.T.
VDD
+
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
-
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
*VGS=10V
VDD
ISD
15V
VDS
L
DRIVER
RG
20V
tp
D.U.T
IAS
0.01Ω
+
-
VDD
A
Fig 16a. Unclamped Inductive Test
Circuit
VDS
VGS
RG
RD
D.U.T.
+-VDD
V1G0SV
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
Fig 17a. Switching Time Test Circuit
V(BR)DSS
tp
IAS
Fig 16b. Unclamped Inductive Waveforms
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 17b. Switching Time Waveforms
L
VCC
DUT
0
1K S
Vds
Vgs(th)
Id
Vgs
Fig 18a. Gate Charge Test Circuit
6 www.irf.com © 2014 International Rectifier
Qgs1 Qgs2
Qgd
Qgodr
Fig 18b. Gate Charge Waveform
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May 12, 2014
6 Page | |||
ページ | 合計 : 8 ページ | ||
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部品番号 | 部品説明 | メーカ |
IRFH5025TRPBF | HEXFET Power MOSFET | International Rectifier |