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PDF HC55171CM Data sheet ( Hoja de datos )
| Número de pieza | HC55171CM | |
| Descripción | 5 REN Ringing SLIC for ISDN Modem/TA and WLL | |
| Fabricantes | Intersil Corporation | |
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Data Sheet
HC55171
July 1998 File Number 4323.4
5 REN Ringing SLIC for
ISDN Modem/TA and WLL
The HC55171 is backward compatible to the HC5517 with
the added capability of driving 5 REN loads. The HC55171 is
ideal for any modem or remote networking access
application that requires plain old telephone service POTS,
capability. The linear amplifier design allows a choice of
Sinusoidal, Square wave or Trapezoidal ringing. The voltage
feed architecture eliminates the need for a high current gain
node achieving improved system noise immunity, an
advantage in highly integrated systems.
The device is manufactured in a high voltage Dielectric
Isolation (DI) process with an operating voltage range from
-16V, for off-hook operation and -80V for ring signal injection.
The DI process provides substrate latch up immunity,
resulting in a robust system design.
Ordering Information
TEMP. RANGE
PART NUMBER
(oC)
PACKAGE
HC55171IM
-40 to 85 28 Ld PLCC
HC55171CM
0 to 75
28 Ld PLCC
HC55171IB
-40 to 85 28 Ld SOIC
HC55171CB
0 to 75
28 Ld SOIC
PKG.
NO.
N28.45
N28.45
M28.3
M28.3
Features
• 5 REN Thru SLIC Ringing Capability to 75VPEAK
• Trapezoid, Square and Sinusoid Ringing Capability
• Bellcore Compliant Ringing Voltage Levels
• Lowest Component Count Trapezoidal Solution
• Single Additional +5V Supply
• Pin For Pin Compatible With HC5517
• DI Provides Latch-Up Immunity
Applications
• ISDN Internal/External Modems
• ISDN Terminal Adapters/Routers
• Wireless Local Loop Subscriber Terminals
• Cable Telephony Set-Top Boxes
• Digital Added Main Line
• Integrated LAN/PBX
• Related Literature
- AN9606, Operation of the HC5517/171 Evaluation
Board
- AN9607, Impedance Matching Design Equations
- AN9628, AC Voltage Gain
- AN9608, Implementing Pulse Metering
- AN9636, Implementing an Analog Port for ISDN Using
the HC5517
- AN549, The HC-5502X/4X Telephone Subscriber Line
Interface Circuits (SLIC)
Block Diagram
TIP FEED
TIP SENSE
RING FEED
RING SENSE 1
RING SENSE 2
VREF
RTI
VBAT
VCC
AGND
BGND
2-WIRE
INTERFACE
LOOP CURRENT
DETECTOR
FAULT
DETECTOR
BIAS
CURRENT
LIMIT
RING TRIP
DETECTOR
IIL LOGIC INTERFACE
F1 F0 RS TST
4-WIRE
INTERFACE
+-
RELAY
DRIVER
RDI
VRX
VTX
VRING
- IN 1
OUT 1
SHD
ALM
ILMT
RTD
RDO
62 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1 page  
HC55171
Functional Diagram
R
TF
25
TF
+-
TIP
SENSE
14
R
R
R
R
4.5K
R
R
R/2
R/20
2R
VRX
17
OUT 1
12
+2V
-IN 1
13
VRING
24
+- OP AMP
+- TA
2R
SHD
15
RING
SENSE 1
RING 16
SENSE 2
100K
100K
100K
100K
4.5K
25K
RA
+-
25K
90K
90K
RTD
FAULT
DET
RF 26
RF +-
90K VB/2
REF
GM
+-
R = 108kΩ
3
VREF
18
NU
28
RTI
VTX
19
VCC
AGND
2
BIAS
NETWORK
1
22
BGND
27 VBAT
THERM
LTD
SH
TSD
4
F1
5
F0
6
RS
9
TST
GK
RF2
11
ILMT
RFC
20
RDI
7
SHD
8
RTD
10
ALM
21
RDO
HC55171 DEVICE TRUTH TABLE
F1 F0
STATE
0 0 Loop power Denial Active
0 1 Power Down Latch RESET, Power on
RESET
1 0 RD Active
1 1 Normal Loop feed
The truth table for the internal logic of the HC55171 is pro-
vided in the above table. This family of ringing SLICS can be
configured to support traditional unbalanced ringing and thru
SLIC balanced ringing. Refer to the HC5509A1R3060 for
unbalanced ringing application information. The device oper-
ating states used by thru SLIC ringing applications are loop
power denial and normal feed. During loop power denial, the
tip and ring amplifiers are disabled (high impedance) and the
DC voltage of each amplifier approaches ground. The SLIC
will not provide current to the subscriber loop during this mode
and will not detect loop closure. Voice transmission occurs
during the normal loop feed mode. During normal loop feed
the SLIC is completely operational and performs all transmis-
sion and supervisory functions.
Power Dissipation
Careful thermal design is required to guarantee that the
maximum junction temperature of 150oC of the device is not
exceeded. The junction temperature of the SLIC can be cal-
culated using:
TJ = TA + θJA(ICC VCC + IBAT VBAT – ((ILOOP)2 • RLOOP))
(EQ. 1)
Where TA is maximum ambient temperature and θJA is junc-
tion to air thermal resistance (and is package dependent).
The entire term in parentheses yields the SLIC power dissi-
pation. The power dissipation of the subscriber loop does
not contribute to device junction temperature and is sub-
tracted from the power dissipation term. Operating at 85oC,
the maximum PLCC SLIC power dissipation is 1.18W. Like-
wise, the maximum SOIC SLIC power dissipation is 0.92W.
66
5 Page 
HC55171
GROUND
TIP
BATTERY
GROUND
(A) SINUSOID
RING
TIP
BATTERY
RING
(B) TRAPEZOID
FIGURE 9. BALANCED RINGING WAVESHAPES
HC55171 ringing SLIC meets the REN drive requirement, the
crest factor limitations and the minimum RMS ringing voltage.
The foremost requirement is that the ringing source must be
able to drive 5 REN. A REN is a ringer equivalence number
modeled by a 6.93kΩ resistor in series with a 8µF capacitor
(see Figure 10). The impedance of 1 REN at 20Hz is approx-
imately 7kΩ. 5 REN is equivalent to five of the networks in
parallel. Figure 10 provides the Bellcore REN models.
The crest factor of the ringing waveform is the ratio of the
peak voltage to the RMS voltage. For reference, the crest
factor of a sinusoid is 1.414 and of a square wave is 1.0.
Bellcore defines the crest factor range from 1.2 to 1.6. A sig-
nal with a crest factor between 1.2 and 1.414 resembles the
trapezoid of Figure 9. A signal with a crest factor between
1.414 and 1.6 resembles a “rounded triangular” wave shape
and is an inefficient waveform for the ringing SLIC.
40µF
1386Ω
5 REN
8µF 6930Ω
1 REN
FIGURE 10. BELLCORE RINGER EQUIVALENCE MODELS
The third pertinent Bellcore requirement is the that RMS ringing
voltage must be greater than 40VRMS at the telephone instru-
ment. The HC5517 is able to deliver 40VRMS at the end of
500Ω loops. The 500Ω loop drive capability of the HC5517 is
achieved with trapezoidal ringing.
Sinusoidal Ringing
The HC55171 uses the same sinusoidal application circuit
as the HC5517. The only difference being the values of three
components in the ring trip filter. The following table lists the
components and the different values required by each
device. All reference designators refer to the application
circuit published in the HC5517 and HC55171 data sheet.
TABLE 1. RING TRIP COMPONENT DIFFERENCES
COMPONENT HC5517 COMPONENT HC55171
R15
47kΩ
RRT3
51.1kΩ
R17
56.2kΩ
RRT1
49.9kΩ
C10
1.0µF
CRT
0.47µF
The sinusoidal circuit published in the HC5517 can be used
as an additional reference circuit for the HC55171. To gener-
ate a sinusoid ringing signal, two conditions must be met on
the ringing (VRING) input of the SLIC.
The first condition is that a positive DC voltage, which is directly
related to the battery voltage, must be present at the ringing
input. The DC voltage is used to force the Tip and Ring DC out-
puts to half the battery voltage. Having both the Tip and Ring
amplifiers biased at the same DC voltage during ringing is one
characteristic of balanced ringing. The centering voltage (VC)
can be calculated from the following equation.
VC
=
V-----B-2---A----T-
– 4
⁄ 20
(EQ. 30)
Substituting values of battery voltage, the centering voltage
is +1.8V for a -80V battery and +1.3V for a -60V battery.
The second condition that must be met for sinusoidal ringing
is a low level ringing signal must be applied to the ringing
input of the SLIC. The AC signal that is present at VRING will
be amplified by a gain of 20 through the Tip amplifier and a
then inverted through the ring amplifier, resulting in a differ-
ential gain of 40. The maximum low level amplitude that can
be injected for a given battery voltage can be determined
from the following equation.
VRING(Max) = (VBAT – 8) ⁄ 20
(EQ. 31)
The maximum output swing may be increased by driving the
VRING negative by 200mV. Equation 31 can then by
rewritten as:
VRING(Max) = (VBAT – 5) ⁄ 20
(EQ. 32)
Exceeding the maximum signal calculated from the above
equation will cause the peaks of the sinusoid to clip at
ground and battery. The compression will reduce the crest
factor of the waveform, producing a trapezoidal waveform.
This is just one method, though inefficient, for achieving trap-
ezoidal ringing. The application circuit provided with the
HC55171 has been specifically developed for trapezoidal
ringing and may also be used with the HC5517.
Trapezoidal Ringing
The trapezoidal ringing waveform provides a larger RMS
voltage to the handset. Larger RMS voltages to the handset
provide more power for ringing and also increase the loop
length supported by the ringing SLIC.
The HC55171 trapezoidal ringing application circuit will oper-
ate for loop lengths ranging from 0Ω to 500Ω. In addition, one
72
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