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IXTV200N10TS PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXTV200N10TS
部品説明 Power MOSFET
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 



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IXTV200N10TS Datasheet, IXTV200N10TS PDF,ピン配置, 機能
TrenchMVTM Power
MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTV200N10T
IXTV200N10TS
VDSS =
ID25 =
RDS(on)
100V
200A
5.5mΩ
Symbol
VDSS
VDGR
VGSM
ID25
ILRMS
IDM
IA
EAS
PD
TJ
TJM
Tstg
TL
FC
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
Transient
TC = 25°C
Lead Current Limit, RMS
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
1.6mm (0.062in.) from case for 10s
Plastic body for 10 seconds
Mounting force (PLUS220)
PLUS220 types
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS VGS = ± 20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 50A, Notes 1, 2
Maximum Ratings
100
100
V
V
± 30 V
200 A
75 A
500 A
40 A
1.5 J
550 W
-55 ... +175
175
-55 ... +175
300
260
°C
°C
°C
°C
°C
11.65 / 2.5..14.6
N/lb.
4g
Characteristic Values
Min. Typ. Max.
100 V
2.5 4.5 V
±200 nA
5 μA
250 μA
4.5 5.5 mΩ
PLUS220 (IXFV)
GDS
D (TAB)
PLUS220SMD (IXFV_S)
G
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
International standard packages
175°C Operating Temperature
Avalanche Rated
Low RDS(on)
Advantages
Easy to mount
Space savings
High power density
Applications
Automotive
- Motor Drives
- High Side Switch
- 12V Battery
- ABS Systems
DC/DC Converters and Off-line UPS
Primary - Side Switch
High Current Switching Applications
© 2008 IXYS CORPORATION, All rights reserved
DS99714A(10/08)

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