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IXTL2x220N075T PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXTL2x220N075T
部品説明 Power MOSFET
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 



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IXTL2x220N075T Datasheet, IXTL2x220N075T PDF,ピン配置, 機能
Advance Technical Information
TrenchMVTM
IXTL2x220N075T
Power MOSFETs
Common-Gate Pair
(Electrically Isolated Back Surface)
D
V=
DSS
75 V
ID25 = 2x120 A
RDS(on)
5.5 mΩ
D
N-Channel Enhancement Mode
Avalanche Rated
RG
R
G
ISOPLUS i5-PakTM (IXTL)
SG
S
Symbol
VDSS
V
DGR
VGSM
ID25
ILRMS
IDM
IAR
EAS
dv/dt
PD
TJ
TJM
T
stg
T
L
TSOLD
VISOL
FC
Weight
Test Conditions
TJ = 25°C to 175°C
T
J
=
25°C
to
175°C;
R
GS
=
1
MΩ
Transient
Maximum Ratings
75 V
75 V
± 20
V
TC = 25°C
(Combined die total = 240 A)
Package Current Limit, RMS
(Combined die total = 150 A)
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
IS IDM, di/dt 100 A/μs, VDD VDSS
TJ 175°C, RG = 3.3 Ω
TC = 25°C
120 A
75 A
600 A
25 A
1.0 J
3 V/ns
150
-55 ... +175
175
-55 ... +175
W
°C
°C
°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
50/60 Hz, t = 1 minute, IISOL < 1 mA, RMS
300
260
2500
°C
°C
V
Mounting force
20..120/4.5..25
N/lb.
9g
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 μA
VGS(th)
VDS = VGS, ID = 250 μA
IGSS VGS = ± 20 V, VDS = 0 V
IDSS
VDS = VDSS
VGS = 0 V
TJ = 150°C
R
DS(on)
V = 10 V, I = 50 A, Notes 1, 2
GS D
Characteristic Values
Min. Typ. Max.
75 V
2.0 4.0 V
± 200 nA
5 μA
250 μA
5.5 m Ω
D
S
G
SD
G = Gate
S = Source
Isolated back
surface
D = Drain
Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 °C Operating Temperature
Advantages
Easy to mount
Space savings
High power density
Applications
Automotive
- Motor Drives
- 42V Power Bus
- ABS Systems
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
Systems
High Current Switching
Applications
All ratings and parametric values are per each MOSFET die unless otherwise specified.
© 2007 IXYS CORPORATION All rights reserved
DS99750(01/07)

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