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IXFL82N60PのメーカーはIXYS Corporationです、この部品の機能は「Power MOSFET ( Transistor )」です。 |
部品番号 | IXFL82N60P |
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部品説明 | Power MOSFET ( Transistor ) | ||
メーカ | IXYS Corporation | ||
ロゴ | |||
このページの下部にプレビューとIXFL82N60Pダウンロード(pdfファイル)リンクがあります。 Total 5 pages
PolarHVTM HiPerFET
Power MOSFET
ISOPLUS264TM
(Electrically Isolated Back Surface)
IXFL 82N60P
VDSS = 600 V
ID25 = 82 A
≤RDS(on) 78 mΩ
trr ≤ 200 ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
Test Conditions
Maximum Ratings ISOPLUS264 TM (IXFL)
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
VISOL
FC
Weight
TJ = 25° C to 150° C
TJ = 25° C to 150° C; RGS = 1 MΩ
Continuous
Transient
TC = 25° C
TC = 25° C, pulse width limited by TJM
TC = 25° C
TC = 25° C
TC = 25° C
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS,
TJ ≤150° C, RG = 2 Ω
TC = 25° C
1.6 mm (0.062 in.) from case for 10 s
600
600
±30
±40
55
200
82
100
5
20
625
-55 ... +150
150
-55 ... +150
300
50/60 Hz, RMS
IISOL ≤1 mA
Mounting force
t = 1 min
t=1s
2500
3000
28..150 / 6.4..30
10
V
V
V
G
D
VS
(Isolated Tab)
A
A
A
mJ
J
V/ns
W
°C
°C
°C
°C
V~
V~
N/lb
G = Gate
S = Source
D = Drain
Features
l International standard isolated
package
l UL recognized package
l Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l Unclamped Inductive Switching (UIS)
rated
l Low package inductance
- easy to drive and to protect
l Fast intrinsic diode
g Advantages
Symbol
Test Conditions
(TJ = 25° C, unless otherwise specified)
BVDSS
VGS = 0 V, ID = 3 mA
VGS(th)
VDS = VGS, ID = 8 mA
IGSS VGS = ±30 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = IT, Note 1
Characteristic Values
Min. Typ. Max.
600 V
l Easy to mount
l Space savings
l High power density
3.0 5.0 V
±200 nA
TJ = 125° C
25 µA
1000 µA
78 m Ω
© 2006 IXYS All rights reserved
DS99531E(02/06)
1 Page Fig. 1. Output Characteristics
@ 25ºC
90
80 VGS = 10V
8V
70
60 7V
50
40
30 6V
20
10
5V
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
VDS - Volts
90
80
70
60
50
40
30
20
10
0
0
Fig. 3. Output Characteristics
@ 125ºC
VGS = 10V
7V
6V
5V
2 4 6 8 10 12 14
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 41A Value
vs. Drain Current
3
2.8 VGS = 10V
2.6
TJ = 125ºC
2.4
2.2
2
1.8
1.6
1.4
1.2 TJ = 25ºC
1
0.8
0
20 40 60 80 100 120 140 160 180
ID - Amperes
© 2006 IXYS All rights reserved
IXFL 82N60P
180
160
140
120
100
80
60
40
20
0
0
Fig. 2. Extended Output Characteristics
@ 25ºC
VGS = 10V
8V
7V
6V
5V
2 4 6 8 10 12 14 16 18
VDS - Volts
20
Fig. 4. RDS(on) Normalized to ID = 41A Value
v s. Junction Temperature
3.1
2.8 VGS = 10V
2.5
2.2
1.9 I D = 82A
1.6
1.3 I D = 41A
1
0.7
0.4
-50
-25
0 25 50 75 100 125 150
TJ - Degrees Centigrade
Fig. 6. Maximum Drain Current vs.
Case Temperature
60
50
40
30
20
10
0
-50
-25
0 25 50 75 100 125 150
TJ - Degrees Centigrade
3Pages | |||
ページ | 合計 : 5 ページ | ||
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部品番号 | 部品説明 | メーカ |
IXFL82N60P | Power MOSFET ( Transistor ) | IXYS Corporation |