|
|
IRFB4115PBFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。 |
部品番号 | IRFB4115PBF |
| |
部品説明 | Power MOSFET ( Transistor ) | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRFB4115PBFダウンロード(pdfファイル)リンクがあります。 Total 8 pages
IRFB4115PbF
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
G
Benefits
l Improved Gate, Avalanche and Dynamic dv/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead Free
l RoHS Compliant, Halogen-Free
HEXFET® Power MOSFET
D VDSS
RDS(on) typ.
max.
S ID (Silicon Limited)
150V
9.3mΩ
11mΩ
104A
D
G
Gate
S
D
G
TO-220AB
D
Drain
S
Source
Base Part Number
IRFB4115PbF
Package Type
TO-220
Standard Pack
Form
Quantity
Tube
50
Orderable Part Number
IRFB4115PbF
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS
dv/dt
Gate-to-Source Voltage
ePeak Diode Recovery
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited)
dSingle Pulse Avalanche Energy
Thermal Resistance
Symbol
RθJC
RθCS
RθJA
Parameter
jJunction-to-Case
Case-to-Sink, Flat Greased Surface
ijJunction-to-Ambient
Max.
104
74
420
380
2.5
± 20
18
-55 to + 175
300
x x10lb in (1.1N m)
830
Typ.
–––
0.50
–––
Max.
0.40
–––
62
Units
A
W
W/°C
V
V/ns
°C
mJ
Units
°C/W
1 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
April 28, 2014
1 Page IRFB4115PbF
1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
10
1
0.1
0.1
5.0V
≤60µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1000
100 TJ = 175°C
1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
5.0V
10
1
0.1
≤60µs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
3.0
ID = 62A
VGS = 10V
2.5
10 TJ = 25°C
2.0
1.5
1
VDS = 50V
≤60µs PULSE WIDTH
0.1
2 4 6 8 10 12 14 16
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
100000
10000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
Coss = Cds + Cgd
Ciss
1000
Coss
Crss
100
10
1
10 100 1000
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
1.0
0.5
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
14.0
ID= 62A
12.0
VDS= 120V
VDS= 75V
10.0
VDS= 30V
8.0
6.0
4.0
2.0
0.0
0
20 40 60 80 100
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
3 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
April 28, 2014
3Pages IRFB4115PbF
+
-
RG
D.U.T +
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
Circuit Layout Considerations
• Low Stray Inductance
-
• Ground Plane
• Low Leakage Inductance
Current Transformer
- +
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
• dv/dt controlled by RG
• Driver same type as D.U.T.
VDD
+
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
-
Re-Applied
Voltage
Body Diode
IInndduucctor Cuurrerennt t
Forward Drop
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 18. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
*VGS=10V
VDD
ISD
V(BR)DSS
15V tp
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
IAS
0.01Ω
+
-
VDD
A
Fig 19a. Unclamped Inductive Test Circuit
VDS
RD
VGS
RG
D.U.T.
+
-
VDD
V1G0SV
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 20a. Switching Time Test Circuit
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 21a. Gate Charge Test Circuit
6 www.irf.com © 2014 International Rectifier
IAS
Fig 19b. Unclamped Inductive Waveforms
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 20b. Switching Time Waveforms
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2 Qgd
Qgodr
Fig 21b. Gate Charge Waveform
Submit Datasheet Feedback
April 28, 2014
6 Page | |||
ページ | 合計 : 8 ページ | ||
|
PDF ダウンロード | [ IRFB4115PBF データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
IRFB4115PBF | Power MOSFET ( Transistor ) | International Rectifier |