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MP04HBP490-26 の電気的特性と機能

MP04HBP490-26のメーカーはDynex Semiconductorです、この部品の機能は「Thyristor/Diode Module」です。


製品の詳細 ( Datasheet PDF )

部品番号 MP04HBP490-26
部品説明 Thyristor/Diode Module
メーカ Dynex Semiconductor
ロゴ Dynex Semiconductor ロゴ 




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MP04HBP490-26 Datasheet, MP04HBP490-26 PDF,ピン配置, 機能
MP04---490
Replaces Jun3 2000 version, DS5204-1.2
FEATURES
s Dual Device Module
s Electrically Isolated Package
s Pressure Contact Construction
s International Standard Footprint
s Alumina (Non Toxic) Isolation Medium
s Integral Water Cooled Heatsink
APPLICATIONS
s Motor Control
s Controlled Rectifier Bridges
s Heater Control
s AC Phase Control
MP04---490
Dual Thyristor, Thyristor/Diode Module
Advance Information
DS5204-2.1 April 2001
KEY PARAMETERS
VDRM
IT(AV)
ITSM(per arm)
Visol
2800V
490A
11250A
3000V
Code
HBT
HBP
HBN
Circuit
Fig.1 Circuit diagrams
VOLTAGE RATINGS
Type Number
MP04---490-28
MP04---490-26
MP04---490-24
Repetitive Peak
Voltages
VDRM VRRM
V
2800
2600
2400
Lower voltage grades available.
Conditions
Tvj = 0˚ to 125˚C,
IDRM = IRRM = 50mA
V =V =
DSM
RSM
V = V + 100V
DRM
RRM
respectively
ORDERING INFORMATION
Order As:
MP04HBT490-28 or MP04HBT490-26 or MP04HBT490-24
MP04HBP490-28 or MP04HBP490-26 or MP04HBP490-24
MP04HBN490-28 or MP04HBN490-26 or MP04HBN490-24
Note: When ordering, please use the whole part number.
Module type code: MP04.
For further information see Package Details.
Fig. 2 Electrical connections - (not to scale)
www.dynexsemi.com
1/9

1 Page





MP04HBP490-26 pdf, ピン配列
MP04---490
DYNAMIC CHARACTERISTICS - THYRISTOR
Symbol
Parameter
Test Conditions
Min. Max. Units
IRRM/IDRM Peak reverse and off-state current
At
VRRM/VDRM,
T
j
=
125˚C
- 50 mA
dV/dt Linear rate of rise of off-state voltage
To 67% VDRM, Tj = 125˚C
- 1000 V/µs
dI/dt Rate of rise of on-state current
From 67% VDRM to 1500A, gate source 1.5A,
- 500 A/µs
t
r
=
0.5µs,
T
j
=
125˚C
VT(TO)
Threshold voltage
At Tvj = 125˚C. See note 1
- 0.91 V
r On-state slope resistance
T
At Tvj = 125˚C. See note 1
- 0.65 m
Note 1: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the
semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these
figures due to the impedance of the busbar from the terminal to the semiconductor.
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
V
GT
IGT
VGD
VFGM
V
FGN
VRGM
IFGM
PGM
P
G(AV)
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
Test Conditions
V = 5V, T = 25oC
DRM
case
VDRM = 5V, Tcase = 25oC
At V T = 125oC
DRM case
Anode positive with respect to cathode
Anode negative with respect to cathode
-
Anode positive with respect to cathode
See table fig. 5
-
Max. Units
3.5 V
200 mA
0.25 V
30 V
0.25 V
5V
10 A
150 W
10 W
www.dynexsemi.com
3/9


3Pages


MP04HBP490-26 電子部品, 半導体
MP04---490
4000
90
6500
80
6000
5500
70
60
5000
50
4500
40
4000
30
3500
3000
2500
800
1000
1200
1400
20
Power resistive load
Power inductive load 10
Temp resistive load
Temp inductive load
0
1600 1800 2000
dc output current - (A)
Fig. 11 50/60Hz single phase bridge DC output current vs
power loss and maximum permissible case temperature
9500
9000
8500
8000
90
7500
80
7000
6500
70
60
6000
5500
50
40
5000
4500
30
20
4000
3500
1000
1200
Power resistive or inductive load 10
Temp resistive or inductive load
0
1400 1600 1800 2000
dc output current - (A)
Fig. 12 50/60Hz three phase bridge DC output current vs
power loss and maximum permissible case temperature
6/9
www.dynexsemi.com

6 Page



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共有リンク

Link :


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