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PFF4N60 の電気的特性と機能

PFF4N60のメーカーはPowerGateです、この部品の機能は「N-channel MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 PFF4N60
部品説明 N-channel MOSFET
メーカ PowerGate
ロゴ PowerGate ロゴ 




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PFF4N60 Datasheet, PFF4N60 PDF,ピン配置, 機能
PFP4N60/PFF4N60
Features
High ruggedness
RDS(ON) (Max 2.3 )@VGS=10V
Gate Charge (Typ. 27nC)
Improved dv/dt Capability
100% Avalanche Tested
PFF4N60
PFP4N60
1
2
3
12
3
1. Gate 2. Drain 3. Source
N-channel MOSFET
BVDSS : 600V
ID : 4.5A
RDS(ON) : 2.3ohm
2
1
General Description
These N-channel enhancement mode field effect power transistor is using Powergate
semiconductor’s advanced planar stripe, DMOS technology intended for off line switch
mode power supply. Also, especially designed to minimize RDS(ON) and high rugged
avalanche characteristics. These devices are well suited for high efficiency switching
Mode power supplies and active power factor correction.
3
Absolute maximum ratings
Symbol
Parameter
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Drain to Source Voltage
Continuous Drain Current (@TC=25oC)
Continuous Drain Current (@TC=100oC)
Drain current pulsed
(note 1)
Gate to Source Voltage
Single pulsed Avalanche Energy
(note 2)
Repetitive Avalanche Energy
(note 1)
Peak diode Recovery dv/dt
(note 3)
Total power dissipation (@TC=25oC)
Derating Factor above 25oC
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
*. Drain current limited by maximum junction temperature.
Thermal characteristics
Symbol
RthJC
RthCS
RthJA
Parameter
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
Thermal resistance, Junction to ambient
Value
PFP4N60
PFF4N60
600
4.5 4.5*
2.6 2.6*
16
±30
262
3.9
4.5
98 33*
0.78 0.31
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/oC
oC
oC
Value
PFP4N60
PFF4N60
1.28 3.8
0.5
62.5
Unit
oC/W
oC/W
oC/W
Copyright@ PowerGate semiconductor USA. All rights reserved.
1/8

1 Page





PFF4N60 pdf, ピン配列
Fig. 1. On-state characteristics
101
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
100 Bottom : 5.5 V
10-1
10-2
10-1
،ط Notes :
1. 250¥ىs Pulse Test
2. T = 25،ة
C
100 101
V , Drain-Source Voltage [V]
DS
Fig. 3. On-resistance variation vs.
drain current and gate voltage
6
5
4
V = 10V
GS
3
2
V = 20V
GS
1
،ط Note : T = 25،ة
J
0
0 2 4 6 8 10 12
I , Drain Current [A]
D
Fig. 5. Capacitance characteristics
(Non-Repetitive)
10000
Ciss = Cgs + Cgd (Cds=shorted)
Coss = Cds + Cgd
Crss = Cgd
1000
100
10
* Notes
1. V =0V
GS
2. f=1MHz
1
5 10 15 20 25 30 35 40
VDS, Drain-Source Voltage [V]
PFP4N60/PFF4N60
Fig. 2. Transfer characteristics
101
100 150oC
10-1
2
25oC
-55oC
* Notes :
1. V = 50V
DS
2. ID=250uA Pulse Test
3 4 5 6 7 8 9 10
V , Gate-Source Voltage [V]
GS
Fig. 4. On state current vs.
diode forward voltage
101
150،ة
25،ة
100
،ط Notes :
1. V = 0V
GS
2. 250¥ىs Pulse Test
10-1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
V , Source-Drain voltage [V]
SD
Fig. 6. Gate charge characteristics
12
11
10
480V
9
300V
8
120V
7
6
5
4
3
2 *. Note : I = 4.5A
D
1
5 10 15 20 25 30
VDS, Drain-Source Voltage [V]
Copyright@ PowerGate semiconductor USA. All rights reserved.
3/8


3Pages


PFF4N60 電子部品, 半導体
PFP4N60/PFF4N60
Fig. 15. Peak diode recovery dv/dt test circuit & waveform
DUT + VDS
VGS (DRIVER)
10VGS
-
IS
L
VDS
RG
Same type
as DUT
*. dv/dt controlled by RG
*. Is controlled by pulse period
IS (DUT)
VDD
VDS (DUT)
10V
di/dt
IRM
Diode reverse current
Diode recovery dv/dt
VF VDD
Body diode forward voltage drop
6/8 Copyright@ PowerGate semiconductor USA. All rights reserved.

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
PFF4N60

N-Channel MOSFET

Pyramis
Pyramis
PFF4N60

N-channel MOSFET

PowerGate
PowerGate


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