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STE336S の電気的特性と機能

STE336SのメーカーはSamHop Microelectronicsです、この部品の機能は「N-Channel Logic Level Enhancement Mode Field Effect Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 STE336S
部品説明 N-Channel Logic Level Enhancement Mode Field Effect Transistor
メーカ SamHop Microelectronics
ロゴ SamHop Microelectronics ロゴ 




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STE336S Datasheet, STE336S PDF,ピン配置, 機能
STE336SGreen
Product
Sa mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS
30V
ID RDS(ON) (mΩ) Typ
4.7 @ VGS=10V
22A
8.7 @ VGS=4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Surface Mount Package.
56 78
PIN 1
Power Pak 5 x 6
12 34
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current-Continuous
TA=25°C
TA=70°C
IDM -Pulsed a
PD
Maximum Power Dissipation
TA=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
Limit
30
±20
22
18.4
77
3.8
2.6
-55 to 175
40
Units
V
V
A
A
A
W
W
°C
°C/W
Details are subject to change without notice.
1
Jan,31,2013
www.samhop.com.tw

1 Page





STE336S pdf, ピン配列
STE336S
80
V GS =10V
64 V GS =5V
V GS =4V
V GS =4.5V
48
32 V GS =3.5V
16 V GS =3V
0
0 0.5 1.0 1.5 2.0 2.5 3.0
VDS, Drain-to-Source Voltage(V)
Figure 1. Output Characteristics
24
20
16
12 V GS =4.5V
8
4 V GS =10V
0
1 16 32 48 64 80
ID, Drain Current(A)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Ver 1.0
30
24
18
Tj=125 C
12
-55 C
6 25 C
0
0 0.8 1.6 2.4 3.2 4.0 4.8
VGS, Gate-to-Source Voltage(V)
Figure 2. Transfer Characteristics
2.0
1.8
V G S =10V
1.6 ID=11A
1.4
1.2
1.0 V G S =4.5V
ID=8A
0
0 25 50 75 100 125 150
Tj(°C )
Tj, Junction Temperature(°C )
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.6
1.4
V DS =V G S
ID=250uA
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 5. Gate Threshold Variation
with Temperature
1.15
ID=250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 6. Breakdown Voltage Variation
with Temperature
Jan,31,2013
3 www.samhop.com.tw


3Pages


STE336S 電子部品, 半導体
STE336S
PACKAGE OUTLINE DIMENSIONS
Power Pak 5 x 6
1.00 * 0.035 DP.
D
J
be
TOP VIEW
K
BOTTOM VIEW
Ver 1.0
R 0.25 TYP.
DETAIL "A"
10O TYP.
DETAIL "A"
SIDE VIEW
SYMBOLS
A
A1
b
c
D
F
E
e
H
L1
G
K
J
L
MILLIMETERS
MIN
0.800
MAX
1.000
0.000
0.350
0.050
0.490
0.254 Ref.
4.900
5.100
1.400 Ref.
5.700
5.900
1.270 BSC.
5.950
6.200
0.100
0.180
0.600 Ref.
4.000 Ref.
0.150
3.400 Ref.
6
Jan,31,2013
www.samhop.com.tw

6 Page



ページ 合計 : 6 ページ
 
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部品番号部品説明メーカ
STE336S

N-Channel Logic Level Enhancement Mode Field Effect Transistor

SamHop Microelectronics
SamHop Microelectronics


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