Datasheet STG8810A Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	STG8810A	Dual N-Channel Enhancement Mode Field Effect Transistor Green Product STG8810A Ver 1.3 S a mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max 14.5 @ VGS=4.5V 15.0 @ VGS=4.0V 20V 7A 17.0 @ VGS=3.7V 19.5 @ VGS=3.1V 23.0 @ VGS=2.5V FEATURES Super high dense cell design for lo	SamHop Microelectronics

STG88 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
STG8810	Dual N-Channel Enhancement Mode Field Effect Transistor Green Product STG8810 Ver 1.0 S a mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 20V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protect	SamHop Microelectronics
STG8810A	Dual N-Channel Enhancement Mode Field Effect Transistor Green Product STG8810A Ver 1.3 S a mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max 14.5 @ VGS=4.5V 15.0 @ VGS=4.0V 20V 7A 17.0 @ VGS=3.7V 19.5 @ VGS=3.1V 23.0 @ VGS=2.5V FEATURES Super high dens	SamHop Microelectronics
STG8820	Dual N-Channel Enhancement Mode Field Effect Transistor Green Product STG8820 Ver 1.1 S a mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 20V ID 7A R DS(ON) (m Ω) Max 20 @ VGS=4.0V 27 @ VGS=2.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable	SamHop Microelectronics

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Número de pieza	Descripción	Fabricantes	PDF
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