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STU09N25のメーカーはSamHop Microelectronicsです、この部品の機能は「N-Channel Enhancement Mode Field Effect Transistor」です。 |
部品番号 | STU09N25 |
| |
部品説明 | N-Channel Enhancement Mode Field Effect Transistor | ||
メーカ | SamHop Microelectronics | ||
ロゴ | |||
このページの下部にプレビューとSTU09N25ダウンロード(pdfファイル)リンクがあります。 Total 10 pages
Green
Product
Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
STU09N25
STD09N25
Ver 1.0
PRODUCT SUMMARY
VDSS ID RDS(ON) (Ω) Max
250V
7.5A
0.4 @ VGS=10V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-252 and TO-251 Package.
G
S
STU SERIES
TO - 252AA( D- PAK )
G
DS
STD SERIES
TO - 251( I - PAK )
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Drain Current-Continuous a d
TC=25°C
TC=100°C
IDM -Pulsed b
PD
Maximum Power Dissipation
TC=25°C
TC=100°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient
Limit
250
±20
7.5
4.74
25
52
21
-55 to 150
2.4
50
Units
V
V
A
A
A
W
W
°C
°C/W
°C/W
Details are subject to change without notice.
1
Sep,09,2013
www.samhop.com.tw
1 Page STU09N25
STD09N25
10
VGS=10V
8 VGS=5V
6 VGS=4V
4
2
VGS=3V
0
012 34 5
VDS, Drain-to-Source Voltage(V)
Figure 1. Output Characteristics
0.90
0.75
0.60
0.45
0.30
V GS =10V
0.15
1
0.1 2 4 6 8 10
ID, Drain Current(A)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Ver 1.0
5
4
3
Tj=125 C
-55 C
2
25 C
1
0
0 123456
VGS, Gate-to-Source Voltage(V)
Figure 2. Transfer Characteristics
2.5
2.2 V G S =10V
I D =3 . 7 5 A
1.9
1.6
1.3
1.0
0
0 25 50 75 100 125 150
Tj(°C )
Tj, Junction Temperature(°C )
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.6
1.4
V DS =V G S
ID=250uA
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 5. Gate Threshold Variation
with Temperature
1.15
ID=10mA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 6. Breakdown Voltage Variation
with Temperature
Sep,09,2013
3 www.samhop.com.tw
3Pages STU09N25
STD09N25
Ver 1.0
E
b2
L3
D1
1
L4
e
E1 D
23
b1
b
1
DETAIL "A"
A
C
TO-252
H
L2
SYMBOLS
A
A1
b
b1
b2
C
D
D1
E
E1
e
H
L
L1
L2
L3
L4
1
L A1
L1 DETAIL "A"
MILLIMETERS
MIN MAX
2.100
2.500
0.000
0.400
0.200
0.889
0.770
1.140
4.800
5.460
0.400
0.600
5.300
6.223
4.900
5.515
6.300
4.400
6.731
5.004
2.290 REF
8.900
10.400
1.397
1.770
2.743 REF.
0.508 REF.
0.890
1.700
0.500
1.100
0° 10°
7° REF.
INCHES
MIN MAX
0.083
0.098
0.000
0.016
0.030
0.008
0.035
0.045
0.189
0.016
0.215
0.024
0.209
0.245
0.193
0.217
0.248
0.173
0.265
0.197
0.090 BSC
0.350
0.409
0.055
0.070
0.108 REF.
0.020 REF.
0.035
0.067
0.020
0.043
0° 10°
7° REF.
Sep,09,2013
6 www.samhop.com.tw
6 Page | |||
ページ | 合計 : 10 ページ | ||
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PDF ダウンロード | [ STU09N25 データシート.PDF ] |
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部品番号 | 部品説明 | メーカ |
STU09N25 | N-Channel Enhancement Mode Field Effect Transistor | SamHop Microelectronics |