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STD16L01のメーカーはSamHop Microelectronicsです、この部品の機能は「N-Channel Logic Level Enhancement Mode Field Effect Transistor」です。 |
部品番号 | STD16L01 |
| |
部品説明 | N-Channel Logic Level Enhancement Mode Field Effect Transistor | ||
メーカ | SamHop Microelectronics | ||
ロゴ | |||
このページの下部にプレビューとSTD16L01ダウンロード(pdfファイル)リンクがあります。 Total 8 pages
STU/D16L01Green
Product
Sa mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS ID RDS(ON) (mΩ) Max
98 @ VGS=10V
100V
13A
118 @ VGS=4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-252 and TO-251 Package.
G
S
STU SERIES
TO - 252AA( D- PAK )
G
DS
STD SERIES
TO - 251( I - PAK )
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current-Continuous
TC=25°C
TC=70°C
IDM -Pulsed a
EAS Single Pulse Avalanche Energy c
PD
Maximum Power Dissipation
TC=25°C
TC=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient
Limit
100
±20
13
10.4
38
56
42
27
-55 to 150
3
50
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
°C/W
Details are subject to change without notice.
1
Jan,23,2013
www.samhop.com.tw
1 Page STU/D16L01
25
VGS=10V
20
VGS=4.5V
15 VGS=4V
10 VGS=3.5V
5
VGS=3V
0
0 0.5 1.0 1.5 2.0 2.5 3.0
VDS, Drain-to-Source Voltage(V)
Figure 1. Output Characteristics
240
200
160
120 V GS =4.5V
80
V GS =10V
40
1
1 5 10 15 20 25
ID, Drain Current(A)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Ver 1.0
15
12
Tj=125 C
9
-55 C
6
25 C
3
0
0 0.8 1.6 2.4 3.2 4.0 4.8
VGS, Gate-to-Source Voltage(V)
Figure 2. Transfer Characteristics
2.2
2.0
1.8 V G S =10V
I D =6 . 5 A
1.6
1.4
V G S =4.5V
1.2 ID=5.9A
1.0
0
0 25 50 75 100 125 150
Tj(°C )
Tj, Junction Temperature(°C )
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.6
1.4
V DS =V G S
ID=250uA
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 5. Gate Threshold Variation
with Temperature
1.15
ID=250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 6. Breakdown Voltage Variation
with Temperature
Jan,23,2013
3 www.samhop.com.tw
3Pages STU/D16L01
PACKAGE OUTLINE DIMENSIONS
TO-251
E
E2
L
D1
E1 D2
D
12 3
H
B2 L2 L1
B1
A
C
Ver 1.0
D3
PB
SYMBOL
A
A1
B
B1
B2
C
D
D1
D2
D3
H
E
E1
E2
L
L1
L2
P
MILLIMETERS
MIN MAX
2.100
2.500
0.350
0.650
0.400
0.800
0.650
1.050
0.500
0.900
0.400
0.600
5.300
5.700
4.900
5.300
6.700
7.300
7.000
8.000
13.700
15.300
6.300
6.700
4.600
4.900
4.800
5.200
1.300
1.700
1.400
0.500
1.800
0.900
2.300 BSC
6
A1
INCHES
MIN MAX
0.083
0.098
0.014
0.026
0.016
0.031
0.026
0.041
0.020
0.035
0.016
0.024
0.209
0.224
0.193
0.209
0.264
0.287
0.276
0.315
0.539
0.602
0.248
0.264
0.181
0.193
0.189
0.205
0.051
0.055
0.020
0.067
0.071
0.035
0.091 BSC
Jan,23,2013
www.samhop.com.tw
6 Page | |||
ページ | 合計 : 8 ページ | ||
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PDF ダウンロード | [ STD16L01 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
STD16L01 | N-Channel Logic Level Enhancement Mode Field Effect Transistor | SamHop Microelectronics |