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STU428S の電気的特性と機能

STU428SのメーカーはSamHop Microelectronicsです、この部品の機能は「N-Channel Logic Level Enhancement Mode Field Effect Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 STU428S
部品説明 N-Channel Logic Level Enhancement Mode Field Effect Transistor
メーカ SamHop Microelectronics
ロゴ SamHop Microelectronics ロゴ 




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STU428S Datasheet, STU428S PDF,ピン配置, 機能
S T U/D428S
S amHop Microelectronics C orp.
Mar.8,2007
N-C hannel Logic Level E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S ID R DS (ON) ( m ı ) T yp
40V 50A
8 @ VGS = 10V
10 @ VGS = 4.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
S urface Mount P ackage.
E S D P rotected.
D
G
S
S TU S E R IE S
T O -252AA(D-P AK )
G
DS
S TD S E R IE S
TO-251(l-P AK)
D
G
S
ABS OLUTE MAXIMUM R ATINGS (Ta=25 C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
VGS
Limit
40
20
Unit
V
V
Drain Current-Continuous @TC=25 C
-Pulsed a
ID
IDM
50
100
A
A
Drain-Source Diode Forward Current IS 20 A
Maximum Power Dissipation @Tc=25 C
PD
50
W
Operating and Storage Temperature Range TJ, TSTG
-55 to 175
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
R JC
R JA
3
50
C /W
C /W
1

1 Page





STU428S pdf, ピン配列
S T U/D428S
E LE CTR ICAL CHAR ACTE R IS TICS (TC=25 C unless otherwise noted)
P a ra meter
S ymbol Condition
DRAIN-SOURCE DIODE CHARACTERISTICS a
Diode Forward Voltage
VSD VGS = 0V, Is = 10A
Min Typ Max Unit
0.95 1.3 V
Notes
a.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
b.Guaranteed by design, not subject to production testing.
60
V GS =4V
50
VGS=4.5 V
40
VG S =10V
30
20 V GS =3V
10
V GS =2.5V
0
0 0.5 1 1.5 2 2.5 3
V DS , Drain-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
20
T j =125 C
15
-55 C
10
25 C
5
0
0 0.8 1.6 2.4 3.2 4.0 4.8
V G S , G ate-to-S ource Voltage (V )
F igure 2. Trans fer C haracteris tics
15
12
V GS =4.5V
9
V GS =10V
6
3
1
1 12 24 36 48 60
ID, Drain C urrent (A)
F igure 3. On-R es is tance vs . Drain C urrent
and G ate V oltage
2.0
1.8
1.6
V G S =10V
1.4 ID=10A
1.2 V G S =4.5V
ID=6A
1.0
0
0 25 50 75 100 125 150
T j( C )
T j, J unction T emperature ( C )
F igure 4. On-R es is tance Variation with
Drain C urrent and Temperature
3


3Pages


STU428S 電子部品, 半導体
S T U/D428S
V DD
RL
V IN
D VOUT
VG S
RGEN G
S
F igure 13. S witching T es t C ircuit
td(on)
VOUT
ton
tr
td(off)
90%
10% INVE R TE D
toff
tf
90%
10%
VIN
10%
90%
50% 50%
PULS E WIDTH
F igure 14. S witching Waveforms
6
2
1
D =0 . 5
0.2
0.1
0.1 0.05
0.02
0.01
0.01
10-5
S INGLE PULS E
10-4
10-3
10-2
10-1
S quare Wave P uls e Duration (s ec)
P DM
t1
t2
1. R J JA (t)=r (t) * R J JA
2. R J JA=S ee Datas heet
3. T J M-T A = P DM* R J J A (t)
4. Duty C ycle, D=t1/t2
1
10
F igure 15. Normalized T hermal T rans ient Impedance C urve
6

6 Page



ページ 合計 : 9 ページ
 
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部品番号部品説明メーカ
STU428S

N-Channel Logic Level Enhancement Mode Field Effect Transistor

SamHop Microelectronics
SamHop Microelectronics


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