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STD12L01AのメーカーはSamHop Microelectronicsです、この部品の機能は「N-Channel Logic Level Enhancement Mode Field Effect Transistor」です。 |
部品番号 | STD12L01A |
| |
部品説明 | N-Channel Logic Level Enhancement Mode Field Effect Transistor | ||
メーカ | SamHop Microelectronics | ||
ロゴ | |||
このページの下部にプレビューとSTD12L01Aダウンロード(pdfファイル)リンクがあります。 Total 7 pages
Gr
Pr
STD12L01A
Sa mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 2.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
140 @ VGS=10V
100V
12A
170 @ VGS=4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-251 Package.
G
DS
STD SERIES
TO - 251( I - PAK )
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Drain Current-Continuous a
TC=25°C
TC=70°C
IDM -Pulsed b
EAS Single Pulse Avalanche Energy d
PD
Maximum Power Dissipation a
TC=25°C
TC=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case a
R JA
Thermal Resistance, Junction-to-Ambient a
Limit
100
±20
12
9.6
35
36
45
29
-55 to 150
2.8
50
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
°C/W
Details are subject to change without notice.
1
Oct,15,2010
www.samhop.com.tw
1 Page STD12L01A
15
VGS=10V
12 VGS=4.5V
9
VGS=4V
6
VGS=3.5V
3
VGS=3V
0
0 0.5 1.0 1.5 2.0 2.5 3.0
VDS, Drain-to-Source Voltage(V)
Figure 1. Output Characteristics
300
250
200
V GS =4.5V
150
100 V GS =10V
50
1
1 3 6 9 12 15
ID, Drain Current(A)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Ver 2.0
15
12
Tj=125 C
9
6
25 C -55 C
3
0
0 1.2 2.4 3.6 4.8 6.0 7.2
VGS, Gate-to-Source Voltage(V)
Figure 2. Transfer Characteristics
2.0
1.8
V G S =10V
1.6 ID=6A
1.4
V G S =10V
1.2 ID=5.5A
1.0
0
0 25 50 75 100 125 150
Tj(°C )
Tj, Junction Temperature(°C )
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.6
1.4
V DS =V G S
ID=250uA
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 5. Gate Threshold Variation
with Temperature
1.15
ID=250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 6. Breakdown Voltage Variation
with Temperature
Oct,15,2010
3 www.samhop.com.tw
3Pages STD12L01A
PACKAGE OUTLINE DIMENSIONS
TO-251
E
E2
L
D1
E1 D2
D
12 3
H
B2 L2 L1
B1
A
C
Ver 2.0
D3
PB
SYMBOL
A
A1
B
B1
B2
C
D
D1
D2
D3
H
E
E1
E2
L
L1
L2
P
MILLIMETERS
MIN MAX
2.100
2.500
0.350
0.650
0.400
0.800
0.650
1.050
0.500
0.900
0.400
0.600
5.300
5.700
4.900
5.300
6.700
7.300
7.000
8.000
13.700
15.300
6.300
6.700
4.600
4.900
4.800
5.200
1.300
1.700
1.400
0.500
1.800
0.900
2.300 BSC
6
A1
INCHES
MIN MAX
0.083
0.098
0.014
0.026
0.016
0.031
0.026
0.041
0.020
0.035
0.016
0.024
0.209
0.224
0.193
0.209
0.264
0.287
0.276
0.315
0.539
0.602
0.248
0.264
0.181
0.193
0.189
0.205
0.051
0.067
0.055
0.020
0.071
0.035
0.091 BSC
Oct,15,2010
www.samhop.com.tw
6 Page | |||
ページ | 合計 : 7 ページ | ||
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PDF ダウンロード | [ STD12L01A データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
STD12L01 | N-Channel Logic Level Enhancement Mode Field Effect Transistor | SamHop Microelectronics |
STD12L01A | N-Channel Logic Level Enhancement Mode Field Effect Transistor | SamHop Microelectronics |