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PDF 1N5711 Data sheet ( Hoja de datos )
| Número de pieza | 1N5711 | |
| Descripción | Schottky Barrier Diodes | |
| Fabricantes | Avago | |
| Logotipo |  |
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1N5711, 1N5712, 5082-2800 Series
Schottky Barrier Diodes for
General Purpose Applications
Data Sheet
Description/Applications
The 1N5711, 1N5712, 5082-2800/10/11 are passivated
Schottky barrier diodes which use a patented “guard ring”
design to achieve a high breakdown voltage. Packaged in
a low cost glass package, they are well suited for high level
detecting, mixing, switching, gating, log or A-D converting,
video detecting, frequency discriminating, sampling, and
wave shaping.
The 5082-2835 is a passivated Schottky diode in a low cost
glass package. It is optimized for low turn-on voltage. The
5082-2835 is particularly well suited for the UHF mixing
needs of the CATV marketplace.
Features
• Low Turn-On Voltage As Low as 0.34 V at 1 mA
• Pico Second Switching Speed
• High Breakdown Voltage Up to 70 V
• Matched Characteristics Available
Outline 15
0.41 (.016)�
0.36 (.014)
1.93 (.076)�
1.73 (.068)
CATHODE
25.4 (1.00)�
MIN.
4.32 (.170)�
3.81 (.150)
Maximum Ratings
Junction Operating and Storage Temperature Range
1N5711, 1N5712, 5082-2800/10/11..... -65°C to +200°C
5082-2835...................................................... -60°C to +150°C
DC Power Dissipation
(Measured in an infinite heat sink at
Derate linearly to zero at maximum
rTaCtAeSdE =te2m5p°C. )
1N5711, 1N5712, 5082-2800/10/11.....................250 mW
5082-2835......................................................................150 mW
Peak Inverse Voltage................................................................. VBR
25.4 (1.00)�
MIN.
DIMENSIONS IN MILLIMETERS AND (INCHES).
1 page  
Typical Parameters, continued
100
10
1.0
+150 C
+100 C
0.1 +50 C
+25 C
0C
0.01 –50 C
0 0.2 0.4 0.6 0.8 1.0 1.2
VF - FORWARD VOLTAGE (V)
Figure 6. I-V Curve Showing Typical Temperature
Variation for the 5082-2811 Schottky Diode.
100,000
100
10,000
1000
100
10
150
100
50
25
TA = C
1
0 5 10 15 20 25 30
VR - REVERSE VOLTAGE (V)
Figure 7. (5082-2811) Typical Variation of Reverse
Current (IR) vs. Reverse Voltage (VR) at Various
Temperatures.
10
1.0 +150 C
+100 C
+50 C
0.1 +25 C
0C
–50 C
0.01
0
0.2 0.4 0.6 0.8 1.0 1.2
VF - FORWARD VOLTAGE (V)
Figure 8. I-V Curve Showing Typical Temperature
Variations for 5082-2835 Schottky Diode.
100,000
10,000
1000
100
10
+150 C
+125 C
+100 C
+75 C
+50 C
+25 C
1
01 23 4 5 6
VR - REVERSE VOLTAGE (V)
Figure 9. (5082-2835) Typical Variation of Reverse
Current (IR) vs. Reverse Voltage (VR) at Various
Temperatures.
11.4
1.2
1.0
0.8 5082-2810/2811
0.6 1N5712
5082-2835
0.4
0.2
0
0 2 4 6 8 10
VR - REVERSE VOLTAGE (V)
Figure 10. Typical Capacitance (CT) vs. Reverse
Voltage (VR).
1000
5082-2800, 1N5711
100 5082-2811
5082-2811
1N5712
10
5082-2835
1
0 2 4 6 8 10
IF - FORWARD CURRENT (mA)
Figure 11. Typical Dynamic Resistance (RD) vs.
Forward Current (IF).
Notes:
Typical values were derived using limited samples during initial product characterization and may not be representative of the overall distribution
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet 1N5711.PDF ] | |
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