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PDF 3DG102 Data sheet ( Hoja de datos )
| Número de pieza | 3DG102 | |
| Descripción | NPN Silicon High Frequency Low Power Transistor | |
| Fabricantes | Shaanxi Qunli | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 3DG102 (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
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Shaanxi Qunli Electric Co., Ltd
Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China
3DG100, 3DG102
NPN Silicon High Frequency Low Power Transistor
Features:
1. Using epitaxy planar technology structure. High working frequency. Metallic packaging.
2. Small volume, light weight, easy installation.
3. Use for high frequency oscillation, high frequency small signal amplification, low power source
adjustment circuit.
4. Quality Class: GS, G. Implementation of standards: QZJ840611
TECHNICAL DATA:
Parameter name
Total Dissipation
Max. Collector Current
Junction Temperature
Storage Temperature
C-B Breakdown Voltage
C-E Breakdown Voltage
E-B Breakdown Voltage
C- Emitter Saturation Voltage Drop
B- E Saturation Voltage Drop
C-B Leakage Current
C-E Leakage Current
E-B Leakage Current
DC Current Gain
Transition frequency
(Ta = 25°C )
Specifications
Symbols Unit
3DG100
3DG102
ABCD
Ptot mW
100 (Ta=25°C)
ABCD
100 (Ta=25°C)
ICM mA
Tjm °C
Tstg °C
20 20
175
-55~+175
30 40 30 40 30 40 30 40
V(BR)CBO V
IC=0.1mA
20 30 20 30 15 20 20 30
V(BR)CEO V
IC=0.1mA
V(BR)EBO V
≥4 (IE=0.1 mA )
VCE(sat) V
1.0 (IC=10mA, IB=1mA)
0.35(IC=10mA, IB=1mA)
VBE(sat) V
1.0 (IC=10mA, IB=1mA)
1.0 (IC=10mA, IB=1mA)
ICBO uA
0.01(VCB=10V)
0.01(VCB=10V)
ICEO uA
0.01(VCE=10V)
0.01(VCE=10V)
IEBO uA
0.01(VEB=1.5V)
0.01(VEB=1.5V)
hFE 25~270 (VCE=10V, IC=3mA)
150 150 300 300 150 150 700 700
fT MHz
VCE=10V, IC=3mA, f=100MHz VCE=10V, IC=3mA, f=100MHz
hFE Colored:
Color
hFE
Orange
25~40
Yellow
40~55
Green
55~80
Blue
80~120
Purple
120~180
Gray
180~270
Outline and Dimensions:
Contact:Jiandong Lei
Tel.:+86-917-6293906
Fax:+86-917-6297928
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 3DG102.PDF ] | |
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