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PDF Si2319CDS Data sheet ( Hoja de datos )
| Número de pieza | Si2319CDS | |
| Descripción | P-Channel 40 V (D-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
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P-Channel 40 V (D-S) MOSFET
Si2319CDS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.077 at VGS = - 10 V
- 40
0.108 at VGS = - 4.5 V
ID (A)a
- 4.4
- 3.7
Qg (Typ.)
7 nC
TO-236
(SOT-23)
G1
S2
3D
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch
• DC/DC Converter
S
G
Top View
Si2319CDS (P7)*
* Marking Code
Ordering Information: Si2319CDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
Limit
- 40
± 20
- 4.4
- 3.5
- 3.1b, c
- 2.5b, c
- 20
- 2.1
- 1b, c
2.5
1.6
1.25b, c
0.8b, c
- 55 to 150
D
P-Channel MOSFET
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
t≤5s
Steady State
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 166 °C/W.
Symbol
RthJA
RthJF
Typical
75
40
Maximum
100
50
Unit
°C/W
Document Number: 66709
S10-1286-Rev. A, 31-May-10
www.vishay.com
1
1 page  
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
5
Si2319CDS
Vishay Siliconix
4
3
2
1
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
1.0
0.8
0.6
0.4
0.2
25 50 75 100 125
TC - Case Temperature (°C)
Power, Junction-to-Foot
150
0.0
0
25 50 75 100 125
TA - Ambient Temperature (°C)
Power, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 66709
S10-1286-Rev. A, 31-May-10
www.vishay.com
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet Si2319CDS.PDF ] | |
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