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PDF H57V2622GMR-75X Data sheet ( Hoja de datos )
| Número de pieza | H57V2622GMR-75X | |
| Descripción | 256Mb Dual Die Synchronous DRAM | |
| Fabricantes | Hynix Semiconductor | |
| Logotipo |  |
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256Mb : x32 Dual Die Synchronous DRAM
www.DataSheet4U.com
256M (8Mx32bit) Hynix SDRAM
Memory
This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
use of circuits described. No patent licenses are implied.
Rev 1.0 / Oct. 2009
1
1 page  
111w w w . D a t a S h e e t 4 U . c o m
Synchronous DRAM Memory 256Mbit
H57V2622GMR Series
BALL CONFIGURATION
123 456
789
A DQ26 DQ24 VSS
VDD DQ23 DQ21
B DQ28 VDDQ VSSQ
VDDQ VSSQ DQ19
C VSSQ DQ27 DQ25
DQ22 DQ20 VDDQ
D VSSQ DQ29 DQ30
DQ17 DQ18 VDDQ
E VDDQ DQ31 NC
NC DQ16 VSSQ
F VSS DQM3 A3
A2 DQM2 VDD
TopG A4 A5 A6
A10 A0
A1
ViewH A7 A8 NC
NC BA1 A11
J
CLK CKE
A9
BA0 /CS /RAS
K
DQM1 NC
NC
/CAS /WE DQM0
L VDDQ DQ8 VSS
VDD DQ7 VSSQ
M VSSQ DQ10 DQ9
DQ6 DQ5 VDDQ
N VSSQ DQ12 DQ14
DQ1 DQ3 VDDQ
P DQ11 VDDQ VSSQ
VDDQ VSSQ DQ4
R DQ13 DQ15 VSS
VDD DQ0 DQ2
Rev 1.0 / Oct. 2009
5
5 Page 
111w w w . D a t a S h e e t 4 U . c o
Synchronous DRAM Memory 256Mbit
H57V2622GMR Series
AC CHARACTERISTICS I (AC operating conditions unless otherwise noted)
Parameter
Symbol
System Clock Cycle Time
CL = 3 tCK3
CL = 2 tCK2
Clock High Pulse Width
tCHW
Clock Low Pulse Width
tCLW
Access Time From Clock
CL = 3 tAC3
CL = 2 tAC2
Data-out Hold Time
tOH
Data-Input Setup Time
tDS
Data-Input Hold Time
tDH
Address Setup Time
tAS
Address Hold Time
tAH
CKE Setup Time
tCKS
CKE Hold Time
tCKH
Command Setup Time
tCS
Command Hold Time
tCH
CLK to Data Output in Low-Z Time
tOLZ
CLK to Data Output in High-Z Time
CL = 3
CL = 2
tOHZ3
tOHZ2
166
Min Max
6.0 1000
--
2.5 -
2.5 -
- 5.4
--
2.0 -
1.5 -
0.8 -
1.5 -
0.8 -
1.5 -
0.8 -
1.5 -
0.8 -
1.0 -
2.7 5.4
--
133
Min Max
7.5 1000
10 1000
2.5 -
2.5 -
- 5.4
-6
2.5 -
1.5 -
0.8 -
1.5 -
0.8 -
1.5 -
0.8 -
1.5 -
0.8 -
1.0 -
2.7 5.4
36
Unit Note
ns
ns
ns 1
ns 1
ns 2
ns 2
ns
ns 1
ns 1
ns 1
ns 1
ns 1
ns 1
ns 1
ns 1
ns
ns
ns
Note:
1. Assume tR / tF (input rise and fall time) is 1ns. If tR & tF > 1ns, then [(tR+tF)/2-1]ns should be added to the parameter.
2. Access time to be measured with input signals of 1V/ns edge rate, from 0.8V to 0.2V. If tR > 1ns, then (tR/2-0.5)ns should be
added to the parameter.
Rev 1.0 / Oct. 2009
11
11 Page | ||
| Páginas | Total 23 Páginas | |
| PDF Descargar | [ Datasheet H57V2622GMR-75X.PDF ] | |
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