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PDF P5NK100Z Data sheet ( Hoja de datos )
| Número de pieza | P5NK100Z | |
| Descripción | STP5NK100Z | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STP5NK100Z, STF5NK100Z
STW5NK100Z
N-channel 1000 V, 2.7 Ω, 3.5 A, TO-220, TO-220FP, TO-247
SuperMESH3™ Power MOSFET
Features
Type
STF5NK100Z
STP5NK100Z
STW5NK100Z
VDSS
(@TJMAX)
RDS(on)max
1000 V
< 3.7 Ω
1000 V
< 3.7 Ω
1000 V
< 3.7 Ω
ID
3.5 A
3.5 A
3.5 A
■ Extremely high dv/dt capability
■ 100% avalanche tested
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Very good manufacturing repeatibility
Applications
■ Switching application
Description
The new SuperMESH™ series of Power
MOSFETS is the result of further design
improvements on ST's well-established strip-
based PowerMESH™ layout. In addition to
significantly lower on-resistance, the device offers
superior dv/dt capability to ensure optimal
performance even in the most demanding
applications. The SuperMESH™ devices further
complement an already broad range of innovative
high voltage MOSFETs, which includes the
revolutionary MDmesh™ products.
Table 1. Device summary
Order code
Marking
STF5NK100Z
STP5NK100Z
STW5NK100Z
F5NK100Z
P5NK100Z
W5NK100Z
TO-220
3
2
1
TO-220FP
3
2
1
TO-247
Figure 1. Internal schematic diagram
D(2)
G(1)
Package
TO-220FP
TO-220
TO-247
S(3)
AM01476v1
Packaging
Tube
Tube
Tube
May 2009
Doc ID 10850 Rev 5
1/15
www.st.com
15
1 page  
STP5NK100Z, STF5NK100Z, STW5NK100Z
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM(1)
VSD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 3.5 A, VGS=0
ISD= 3.5 A,
di/dt = 100 A/µs,
VDD=30 V
(see Figure 23)
ISD= 3.5 A,
di/dt = 100 A/µs,
VDD=35 V, Tj=150 °C
(see Figure 23)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300 µs, duty cycle 1.5%
Min. Typ. Max. Unit
- 3.5 A
- 14 A
- 1.6 V
605
- 3.09
10.5
ns
µC
A
742
- 4.2
11.2
ns
µC
A
Table 8. Gate-source Zener diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
BVGSO Gate-source breakdown voltage Igs=± 1 mA (open drain) 30
V
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Doc ID 10850 Rev 5
5/15
5 Page 
STP5NK100Z, STF5NK100Z, STW5NK100Z
Package mechanical data
Dim.
A
B
D
E
F
F1
F2
G
G1
H
L2
L3
L4
L5
L6
L7
Dia
TO-220FP mechanical data
Min.
4.4
2.5
2.5
0.45
0.75
1.15
1.15
4.95
2.4
10
28.6
9.8
2.9
15.9
9
3
mm
Typ.
16
L7
A
B
Dia
L6
D
L5
F1 F2
H
L2
L3
Doc ID 10850 Rev 5
L4
Max.
4.6
2.7
2.75
0.7
1
1.70
1.5
5.2
2.7
10.4
30.6
10.6
3.6
16.4
9.3
3.2
E
F
G
G1
7012510_Rev_J
11/15
11 Page | ||
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| PDF Descargar | [ Datasheet P5NK100Z.PDF ] | |
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