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H27U2G6F2C の電気的特性と機能

H27U2G6F2CのメーカーはHynixです、この部品の機能は「2Gb NAND FLASH」です。


製品の詳細 ( Datasheet PDF )

部品番号 H27U2G6F2C
部品説明 2Gb NAND FLASH
メーカ Hynix
ロゴ Hynix ロゴ 




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H27U2G6F2C Datasheet, H27U2G6F2C PDF,ピン配置, 機能
APCPCWM_4828539:WP_0000001WP_0000001
1
H27(U_S)2G8_6F2C
2 Gbit (256M x 8 bit) NAND Flash
2Gb NAND FLASH
H27U2G8_6F2C
H27S2G8_6F2C
Rev 0.0 / Apr. 2010
*da93e538-013c*
1
B34416/177.179.157.84/2010-06-28 11:19

1 Page





H27U2G6F2C pdf, ピン配列
APCPCWM_4828539:WP_0000001WP_0000001
FEATURES SUMMARY
DENSITY
- 2Gbit: 2048blocks
Nand FLASH INTERFACE
- NAND Interface
- ADDRESS / DATA Multiplexing
SUPPLY VOLTAGE
- Vcc = 3.0/1.8V Volt core supply voltage for Program,
Erase and Read operations.
MEMORY CELL ARRAY
- X8: (2K + 64) bytes x 64 pages x 2048 blocks
- X16: (1k+32) words x 64 pages x 2048 blocks
PAGE SIZE
- X8: (2048 + 64 spare) bytes
- X16:(1024 + 32spare) Words
Block SIZE
- X8: (128K + 4K spare) bytes
- X16:(64K + 2K spare) Words
PAGE READ / PROGRAM
- Random access: 25us (Max)
- Sequential access: 25ns / 45ns (3.0V/1.8V, min.)
- Program time(3.0V/1.8V): 200us / 250us (Typ)
- Multi-page program time (2 pages):
200us / 250us (3.0V/1.8V, Typ.)
BLOCK ERASE / MULTIPLE BLOCK ERASE
- Block erase time: 3.5 ms (Typ)
- Multi-block erase time (2 blocks):
3.5ms/ 3.5ms (3.0V/1.8V, Typ.)
SEQURITY
- OTP area
- Sreial number (unique ID)
- Non-volatile protection option for OTP and Block0(Opt.)
- Hardware program/erase disabled during
power transition
1
H27(U_S)2G8_6F2C
2 Gbit (256M x 8 bit) NAND Flash
ADDTIONAL FEATURE
- Multiplane Architecture:
Array is split into two independent planes.
Parallel operations on both planes are available, having
program and erase time.
- Single and multiplane copy back program with automatic
EDC (error detection code)
- Single and multiplane page re-program
- Single and multiplane cache program
- Cache read
- Multiplane block erase
Reliability
- 100,000 Program / Erase cycles (with 1bit /528Byte ECC)
- 10 Year Data retention
ONFI 1.0 COMPLIANT COMMAND SET
ELECTRONICAL SIGNATURE
- Munufacture ID: ADh
- Device ID
PACKAGE
- Lead/Halogen Free
- TSOP48 12 x 20 x 1.2 mm
- FBGA63 9 x 11 x 1.0 mm
Rev 0.0 / Apr. 2010
*da93e538-013c*
3
B34416/177.179.157.84/2010-06-28 11:19


3Pages


H27U2G6F2C 電子部品, 半導体
APCPCWM_4828539:WP_0000001WP_0000001
1
H27(U_S)2G8_6F2C
2 Gbit (256M x 8 bit) NAND Flash
page re-program guarantee imporve performance, since data insertion can be omitted during re-program operations,
and save ram buffer at the host in the case of program failure.
The devices, available in the TSOP48 (12X20mm) package, support the ONFI1.0 specfication and come with four sequ-
rity features:
- OTP (one time programmable) area, which is a restricted access area where sensitive data/code can be stored
permantely.
- Serial number (unique identifier), which allows the devices to be uniquely indentified.
- Read ID2 extention
- Non-volatile protection to lock sensible data permanently.
These security features are subject to an NDA (non-disclosure agreement) and are, therefore, no described in the
datasheet. For more details about them, contact your nearest Hynix sales office.
1.1. Product List
PART NUMBER
H27U2G8F2C
H27U2G6F2C
H27S2G8F2C
H27S2G6F2C
ORGANIZATION
x8
x16
x8
x16
Operating RANGE
2.7 to 3.6V
2.7 to 3.6V
1.7 to 1.95V
1.7 to 1.95V
Table 1: list of supported versions / packages
VDD
PACKAGE
TSOP
-
FBGA
-
CE#
WE#
RE#
ALE
CLE
WP#
DQ0~DQ7 (x8)
DQ0~DQ15 (x16)
RB#
Rev 0.0 / Apr. 2010
VSS
Figure 1: Logic Diagram
6
*da93e538-013c*
B34416/177.179.157.84/2010-06-28 11:19

6 Page



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部品番号部品説明メーカ
H27U2G6F2C

2Gb NAND FLASH

Hynix
Hynix


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