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PDF AP9620GM-HF Data sheet ( Hoja de datos )
| Número de pieza | AP9620GM-HF | |
| Descripción | P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Advanced Power
Electronics Corp.
AP9620GM-HF
Halogen-Free Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On Resistance
▼ Capable of 2.5V Drive
▼ Fast Switching
▼ RoHS Compliant
Description
D
D
D
D
SO-8
G
S
S
S
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
BVDSS
RDS(ON)
ID
-20V
20mΩ
-9.5A
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-amb
Parameter
Maximum Thermal Resistance, Junction-ambient3
Rating
-20
±8
-9.5
-7.6
-76
2.5
0.02
-55 to 150
-55 to 150
Value
50
Units
V
V
A
A
A
W
W/℃
℃
℃
Unit
℃/W
Data and specifications subject to change without notice
1
200805061
1 page  
AP9620GM-HF
7
I D =-9.5A
6
V DS =-10V
5
4
3
2
1
0
0 5 10 15 20 25 30 35 40
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
f=1.0MHz
10000
Ciss
1000
Coss
Crss
100
1 5 9 13 17 21 25 29
-V DS (V)
Fig 10. Typical Capacitance Characteristics
100.00
10.00
T j =150 o C
1.00
T j =25 o C
0.10
0.01
0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5
-V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
1
0.8
0.6
0.4
0.2
0
-50
0
50 100 150
T j , Junction Temperature ( o C)
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet AP9620GM-HF.PDF ] | |
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