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AP01L60T-HF の電気的特性と機能

AP01L60T-HFのメーカーはAdvanced Power Electronicsです、この部品の機能は「N-CHANNEL ENHANCEMENT MODE POWER MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 AP01L60T-HF
部品説明 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
メーカ Advanced Power Electronics
ロゴ Advanced Power Electronics ロゴ 




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AP01L60T-HF Datasheet, AP01L60T-HF PDF,ピン配置, 機能
Advanced Power
Electronics Corp.
AP01L60T-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low Gate Charge
Fast Switching Characteristics
Simple Drive Requirement
RoHS Compliant & Halogen-Free
Description
G
D
S
BVDSS
RDS(ON)
ID
600V
12Ω
160mA
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The TO-92 package is widely used for all commercial-industrial
applications.
G
D
S
TO-92
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
ID@TA=100
IDM
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
PD@TA=25
Total Power Dissipation
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
Rating
600
+30
160
100
300
0.83
-55 to 150
-55 to 150
Units
V
V
mA
mA
mA
W
Thermal Data
Symbol
Parameter
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
150
Unit
/W
1
200906085

1 Page





AP01L60T-HF pdf, ピン配列
1.5
T A =25 o C
1.0
10V
6.0V
5.5V
5.0V
0.5 V G =4.0V
0.0
0
12 24 36
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1.2
1.1
1
0.9
0.8
-50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 3. Normalized BVDSS v.s. Junction
Temperature
10
1
T j = 150 o C
0.1
T j = 25 o C
0.01
0
0.4 0.8
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
AP01L60T-HF
1.00
T A =150 o C
0.75
0.50
0.25
10V
5.0V
4.5V
V G =4.0V
0.00
0
10 20 30 40
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
3.0
I D =0.5A
2.4 V G =10V
1.8
1.2
0.6
0.0
-50
0
50 100
T j , Junction Temperature ( o C )
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
3.6
150
3.2
2.8
2.4
2
1.6
-50 0 50 100
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
3


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[ AP01L60T-HF データシート.PDF ]


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共有リンク

Link :


部品番号部品説明メーカ
AP01L60T-H-HF

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics
Advanced Power Electronics
AP01L60T-HF

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics
Advanced Power Electronics


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